AOT5N50_001

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	620pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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AOT5N50_001 is a single, N-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). MOSFETs are a type of Field-Effect Transistor (FET) commonly used in a variety of electronic applications. They are facilitated by the use of a channel of varying resistance within the device which controls the flow of current. MOSFETs have many benefits and advantages over other types of transistors. They are more efficient, offering a low forward voltage and can operate at higher frequencies. MOSFETs are also faster compared to bipolar junction transistors, while also requiring less power.The AOT5N50_001 has a variety of benefits and advantages, making it an ideal choice for many different types of applications. It has a breakdown voltage of 500V, an on-state resistance of 2.3 Ohm, and a maximum safe operating temperature of 175°C. It has been designed specifically for high frequency switching and power amplification applications, such as consumer audio and video equipment.This MOSFET has a wide range of features and capabilities, making it suitable for a variety of uses. It offers high reliability due to its low on-resistance and low gate charge, as well as good thermal performance. The high breakdown voltage also makes it suitable for use in high voltage applications.MOSFETs such as the AOT5N50_001 consist of three terminals - source, drain and gate. The source and drain are connected in the same way as a regular transistor, and the gate can be thought of as a control signal. When a negative voltage is applied to the gate, a small field is created which pushes the electrons away from the source and towards the drain. This is known as depletion mode and allows current to flow from source to drain.When a positive voltage is applied to the gate, a small field is created which attracts electrons from the source towards the drain. This is known as enhancement mode and stops current from flowing from the source to the drain. The amount of current flowing through the MOSFET can be controlled by varying the voltage applied at the gate.In conclusion, the AOT5N50_001 is a single, N-channel MOSFET which is suitable for many different types of applications due to its wide range of features and capabilities. It offers high reliability, good thermal performance and a high breakdown voltage. It is also suitable for high frequency switching and power amplification applications, making it an ideal choice for consumer audio and video equipment.

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