AR3PJ-M3/86A Allicdata Electronics
Allicdata Part #:

AR3PJ-M3/86ATR-ND

Manufacturer Part#:

AR3PJ-M3/86A

Price: $ 0.24
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE AVALANCHE 600V 1.8A TO277A
More Detail: Diode Avalanche 600V 1.8A (DC) Surface Mount TO-27...
DataSheet: AR3PJ-M3/86A datasheetAR3PJ-M3/86A Datasheet/PDF
Quantity: 1000
3000 +: $ 0.21309
Stock 1000Can Ship Immediately
$ 0.24
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: AR3PJ
Description

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Diodes - Rectifiers - Single: AR3PJ-M3/86A

The AR3PJ-M3/86A, or 3A Fast Recover Rectifier, is a silicon diode offering superior performance in a variety of application fields. It offers fast forward recovery time, low reverse voltage drop, and high current capability, making it a popular choice for numerous applications. Additionally, it has often been praised for its high-temperature performance, as well as its high junction temperature capability.

Application Field

The AR3PJ-M3/86A is used in a variety of application fields, including automotive electronics and telecommunications, AC-DC converters, computer adapter power supplies, UPS, and solar energy systems. It can handle high-frequency switching operations, and has a built-in heat sink for improved thermal performance. As a fast-recovery diode, it is also able to provide reliable, high-performance rectification for various purposes. It is capable of withstanding high surge currents for extended periods of time and can be used to rectify AC power sources ranging from 6 VDC to 60 VDC.

Working Principle

The AR3PJ-M3/86A rectifier is based on the PN junction diode principle. It is made of a semiconducting material whose crystalline structure has an intrinsic region and two opposite regions. The semiconductor material is conductive in one direction but not in the other, and this allows current to flow only in one direction through the diode. As current passes through the AR3PJ-M3/86A, it creates a potential barrier in the form of a depletion region, which prevents current from flowing in the other direction.

When used as a rectifier, the diode gets connected across two input AC voltage sources. As the two input AC source voltages alternates in the opposite directions, the AR3PJ-M3/86A will rectify them into a single DC output voltage. The speed of the rectifier is then determined by the total forward recovery time. This is the time taken for the depletion region to charge up to a level where a given current can pass through it. The AR3PJ-M3/86A has a rated forward recovery time of 6 nanoseconds for any forward current.

The AR3PJ-M3/86A is also capable of providing over-voltage protection. When the voltage across the diode exceeds the reverse breakdown voltage, the diode will switch off and provide protection against the voltage spike. It can also be used to protect against high-voltage transients, as well as surges and ESD (electrostatic discharge) events.

Conclusion

The AR3PJ-M3/86A is an excellent choice for various applications, thanks to its high current capability, fast forward recovery time, and ability to function at high temperatures. It is used in automotive and telecommunications, AC-DC converters, solar energy systems, and many other applications. It operates based on the PN junction diode principle, rectifying two input AC voltage sources into a single DC output voltage. It also provides high-frequency switching operations, over-voltage protection, and transient protection. All in all, the AR3PJ-M3/86A is a reliable, durable, and high-performing diode suited for numerous applications.

The specific data is subject to PDF, and the above content is for reference

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