AS3BGHM3_A/I Allicdata Electronics
Allicdata Part #:

AS3BGHM3_A/I-ND

Manufacturer Part#:

AS3BGHM3_A/I

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE AVALANCHE 400V 3A DO214AA
More Detail: Diode Avalanche 400V 3A (DC) Surface Mount DO-214A...
DataSheet: AS3BGHM3_A/I datasheetAS3BGHM3_A/I Datasheet/PDF
Quantity: 1000
6400 +: $ 0.10282
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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The AS3BGHM3_A/I single rectifier diode is a high-performance device designed for efficient rectification in low-power applications. This device features a low forward voltage drop and a low reverse leakage current, making it suitable for use in a wide range of applications, including AC and DC drivers, power supplies, charging circuits, and general rectification. By connecting two of these devices in series, it is possible to achieve high current rectification and excellent pulse shape.

The AS3BGHM3_A/I is a three-terminal diode, with an anode, a cathode, and a gate. It operates by allowing current flow in one direction, while blocking current in the other direction. In other words, it acts as a one-way valve for electric current. The current flows from the anode to the cathode when a forward voltage is applied. When a reverse voltage is applied, the current is blocked and little current flows in the opposite direction.

When forward biased, the AS3BGHM3_A/I has a low forward voltage drop of 500mV. This means that it will dissipate less power than other diodes, making it ideal for power supplies and other low-power applications. It also has a very low reverse leakage current, which is an advantage for high-precision circuit designs. For low-power applications, the AS3BGHM3_A/I has the advantage of low reverse leakage current and low pulsing voltage drop.

The AS3BGHM3_A/I single rectifier diode is a versatile device and can be used in a range of applications. It is used in AC and DC drives, power supplies, charging circuits, and general rectification applications. It can also be used in high-frequency applications as it has a low forward voltage drop. For high-current rectification, two diodes can be connected in series.

The AS3BGHM3_A/I diode is constructed from a silicon substrate, which is then coated with a thin layer of metal to create the gate. This thin gate layer acts as the electrical connection between the anode and the cathode and controls the flow of current. In operation, a voltage is applied to the anode and cathode, causing current to flow from the anode to the cathode. The thin gate layer controls the current flow, and allows current to flow from the anode to the cathode when a forward voltage is applied, and blocks current in the opposite direction when a reverse voltage is applied.

The AS3BGHM3_A/I single rectifier diode is an efficient and reliable rectifying device. Its low forward voltage drop and reverse leakage current make it suitable for a wide range of low-power applications. It is also well-suited for high-current rectification applications when two devices are connected in series. With its versatile application field, low power consumption, and high performance, the AS3BGHM3_A/I is an excellent choice for many rectification needs.

The specific data is subject to PDF, and the above content is for reference

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