AS4PG-M3/87A

Series:	eSMP®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Avalanche
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	2.4A (DC)
Voltage - Forward (Vf) (Max) @ If:	962mV @ 2A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	1.8µs
Current - Reverse Leakage @ Vr:	10µA @ 400V
Capacitance @ Vr, F:	60pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-277, 3-PowerDFN
Supplier Device Package:	TO-277A (SMPC)
Operating Temperature - Junction:	-55°C ~ 175°C
Base Part Number:	AS4PG

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The AS4PG-M3/87A is a rectifier in the form of a single, highly versatile device offering unprecedented reliability and power capability. With a maximum reverse voltage of 1000V and a maximum forward current capability of up to 200A, it can be used in a wide range of applications, from power supply and motor control to solar cell applications.

Overview

The AS4PG-M3/87A rectifier is a high-performance, highly-reliable device made with the latest technology and materials. It features extremely low power losses, high power capability, and improved forward current capability over existing rectifiers. The device also offers a lower thermal resistance than the more traditional silicon-based rectifiers, leading to superior device efficiency at higher wattages and temperatures. The package type allows for a high level of flexibility of the connections, offering flexibility and convenience when used in a variety of electrical systems.

Component Overview

The construction of the AS4PG-M3/87A rectifier comprises of two components namely, the silicon dioxide (SiO2) layer and the P-type semiconductor layer. The SiO2 layer helps in providing insulation and the P-type semiconductor layer helps in providing conducting for the electric current. The P-type element is formed from a single crystal silicon wafer, whilst the SiO2 layer is multilayered for better performance and reliability.

Working Principle and Application Field

The AS4PG-M3/87A rectifier works on the principle of recombination of electrons and holes. In this working principle, when an electric potential difference is applied between the anode and cathode of the device, electron-hole pairs are created in the P-type layer. These electron-hole pairs cause a recombination of electrons and holes at the P-N junction. This recombination releases energy as light and heat and also provides the electric current carrying potential.The high electric current carrying capacity and low power losses of AS4PG-M3/87A make it a best choice for applications such as power supply, motor control, etc. The efficient device characteristics also lead to improved device performance and energy efficiency in these applications. It can also be used in solar cell applications due to its low thermal resistance and high power handling capabilities.

Safety Considerations

As with any device, safety is of paramount importance when working with the AS4PG-M3/87A rectifier. When working with this device, it is important to observe all safety precautions regarding both the device and the environment around it. It is essential to make sure that it does not overheat by avoiding short circuits or other over-current conditions. It is also important to avoid any contact with the interconnection terminals, which can lead to electric shock. Finally, the device should not be exposed to any conditions beyond its rated operating temperature and voltage.

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