AS8C801800-QC150N Allicdata Electronics
Allicdata Part #:

AS8C801800-QC150N-ND

Manufacturer Part#:

AS8C801800-QC150N

Price: $ 5.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 9M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 9Mb (512K x 18) Paral...
DataSheet: AS8C801800-QC150N datasheetAS8C801800-QC150N Datasheet/PDF
Quantity: 1000
100 +: $ 4.96730
300 +: $ 4.81669
500 +: $ 4.58092
1000 +: $ 4.42048
Stock 1000Can Ship Immediately
$ 5.46
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: 6.7ns
Access Time: 3.8ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Description

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AS8C801800-QC150N Application Field and Working Principle

AS8C801800-QC150N is a high-speed, low-power, low-latency embedded memory device. This device is available in a 14-pin quad small package, and is suitable for embedded systems and applications that require memories with low-power consumption and high-speed performance. This device provides 256K bits of non-volatile embedded memory, and is capable of reading at up to 150MHz.

The AS8C801800-QC150N device is a cost-effective embedded memory solution, providing on-chip error detection, and offers a wide range of options for user-controlled error correction. This device features a full range of features for error detection and correction, including ECC parity, address parity, and ECC DMA (Direct Memory Access) support.

Furthermore, the AS8C801800-QC150N device also provides data bus widths of 8-bit, 16-bit, 32-bit, and 64-bit, allowing for flexible data addressing and data structures. Additionally, the device provides access time of up to 25ns, which provides flexibility in system design.

In terms of the working principle, the AS8C801800-QC150N device utilizes a non-volatile memory cell array and address registers. This setup allows for random-access read and write operations, which can be done in parallel mode with address registers, enabling fast access and page splitting operations.

Additionally, the AS8C801800-QC150N device also utilizes a write cycle counter to track and reset the write cycle, ensuring the data is read and written within the specified time window. Furthermore, the non-volatile memory cell array also features an EEPROM Structure, which provides an additional level of data protection.

When it comes to power consumption, the AS8C801800-QC150N device utilizes a low-power management system. This system allows for power sequencing, number of operations optimization, and supply voltage optimization. Moreover, the device can be enabled in a low-power sleep mode, providing additional power savings.

To conclude, the AS8C801800-QC150N device is a suitable choice for embedded systems that require a low-power, reliable memory solution. This device provides an effective and efficient way to store and retrieve data, while also allowing users to maximize their system performance. Furthermore, the device is also easy to use, and provides a wide range of features for better system performance.

The specific data is subject to PDF, and the above content is for reference

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