AS8C801825A-QC75N Allicdata Electronics
Allicdata Part #:

AS8C801825A-QC75N-ND

Manufacturer Part#:

AS8C801825A-QC75N

Price: $ 5.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 9M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 9Mb (512K x 18) Paral...
DataSheet: AS8C801825A-QC75N datasheetAS8C801825A-QC75N Datasheet/PDF
Quantity: 1000
100 +: $ 4.96730
300 +: $ 4.81669
500 +: $ 4.58092
1000 +: $ 4.42048
Stock 1000Can Ship Immediately
$ 5.46
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 10ns
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Description

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The AS8C801825A-QC75N, or 801825A-QC75N for short, is a 4M bit static random access memory (SRAM) manufactured by AC Microchip. It is their widely popular product, used by many manufacturers and customers in the market.

The 801825A-QC75N contains 4 million bits of SRAM, organized in 8-bit words, and can operate at speeds of up to 75 MHz. It has a power supply voltage of 3.3 V, and features two chip-select inputs (CS1 and CS2). The 801825A-QC75N is organized as either a 128K x 8bit, 64K x 16bit, or 16K x 32bit memory. It has a 512-byte burst-write function, allowing it to write data at high speed without repackaging. Its standby current is extremely low, allowing it to be used in highly-sensitive applications. It also supports automatic power-up/power-down sequencing, ensuring that sensitive memory cell activities are well managed.

The 801825A-QC75N is mainly used in industrial, communication and consumer applications. It is especially useful in low-power applications, where long battery life is essential. It can also be used in mobile device and industrial control applications. Its advanced burst write feature ensures data can be written quickly and efficiently.

In terms of working principle, the 801825A-QC75N is a static RAM that stores data in static cells, which do not require periodic refreshment like dynamic RAMs. It has an active low CS1 input, an active low CS2 input, an output enable (OE) input and a write enable (WE) input. A low logic level on the CS1 or CS2 input selects the memory device for access. If a low logic level is applied to the OE or WE inputs, then the selected memory device is activated. Data is written to or read from the selected memory device using data-in and data-out pins. The 801825A-QC75N also has an internal data bus which can be used to transfer data between external devices.

The AS8C801825A-QC75N is a powerful and reliable memory solution with a wide range of applications. Its low power consumption makes it an ideal choice for sensitive, low-power applications, while its fast speed and high-capacity make it suitable for high-speed data processing applications. With its advanced features such as burst write and power-up/down sequencing, the 801825A-QC75N is a reliable choice for today\'s market.

The specific data is subject to PDF, and the above content is for reference

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