
Allicdata Part #: | ASML-5829-TR2G-ND |
Manufacturer Part#: |
ASML-5829-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | IC PIN DIODE LIMITER LP SOT-323 |
More Detail: | RF Diode Pin + Schottky 1 Pair Series Connection 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Pin + Schottky 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 128V, 22V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 0.375pF @ 5V, 1MHz |
Resistance @ If, F: | 2.5 Ohm @ 5mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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ASML-5829-TR2G Application Field and Working Principle
The ASML-5829-TR2G is an RF diode designed for a range of applications in the radio frequency and microwave field. It has a wide range of applications in both radio frequency circuits and telecommunications equipment. It is also suitable for use in various switching, detection and control applications.
The diode has an environmental rating of -30 degrees Celsius to +85 degrees Celsius and an operating temperature of -55 degrees Celsius to +125 degrees Celsius. It has a maximum power dissipation of 2W, a maximum reverse leakage current of 5mA and a capacitance range of 5pF to 50pF.
The ASML-5829-TR2G consists of a P-type semiconductor material which functions as an amplifier. It has a dielectric isolation structure which offers high levels of electrical performance and reliability. The diode also features a hermetically sealed, robust plastic housing which makes it highly resistant to environmental extremes.
The ASML-5829-TR2G can be used for a variety of applications such as signal detection, signal modulation, signal conditioning, powering devices, switching and control. It has a wide range of frequency response and is suitable for use in a variety of applications from consumer electronics to industrial, automotive, military and aerospace systems.
The working principle of the ASML-5829-TR2G is based on the N-type and P-type semiconductors. When a forward biased voltage is applied, the electrons in the N-type semiconductor are attracted by the positive charge on the P-type semiconductor, resulting in a current flow. When a reverse biased voltage is applied, the electrons in the P-type semiconductor are repelled by the negative charge on the N-type semiconductor, resulting in a current flow.
The ASML-5829-TR2G consists of a P-type semiconductor and has a wide range of applications such as signal detection, signal modulation, signal conditioning, powering devices, switching and control. It is a high-performance and reliable device with a wide range of frequency response, making it suitable for use in various applications in both radio frequency circuits and telecommunications equipment.
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