AT24C64AN-10SI-1.8-T

Memory - AT24C64AN-10SI-1.8-T Application Field and Working Principle

The AT24C64AN-10SI-1.8-T is a memory device developed by AMI Semiconductor (now part of On Semiconductor). This device is an electrically erasable programmable read-only memory (EEPROM) with an integrated static RAM and serial interface. Its design ensures superior reliability even in high-temperature environments.

This small 64K x 8 bit electrically erasable programmable read-only memory (EEPROM) is designed to be used in automotive, industrial and telecom applications. The device is organized into eight internal blocks of 8K-bits of data memory each. This chip supports up to 8192 programmable bytes, and 128 Kbits of EEPROM.

The AT24C64AN-10SI-1.8-T memory device is based on an array architecture that includes many nonvolatile static RAMs. This nonvolatile array is organized into a two-dimensional matrix, with each RAM cell possessing its own address. The RAM cells are arranged into columns and rows, with each RAM cell occupying its own cell in the matrix. The memory cells are arranged in a row, in a 1Kbit row block architecture.

The AT24C64AN-10SI-1.8-T memory device utilizes an electrically erasable programmable read-only memory (EEPROM) cell in each RAM cell. This EEPROM cell consists of an encompassing layer of electrical insulation that is topped by a thin insulating layer of silicon oxide. A single pin connection is made between the EEPROM cell and the RAM cell to control the state of the EEPROM cell. The EEPROM cell can be programmed to store a single logic level or a sequence of bits.

Data is written to the AT24C64AN-10SI-1.8-T EEPROM cell by providing a voltage difference between two pins located on each side of the EEPROM cell. These pins are called Bit 7 and Bit 6. When the voltage difference is applied between Bit 7 and Bit 6, the EEPROM cell is written with the data contained in the cell.

The data contained in the AT24C64AN-10SI-1.8-T EEPROM cell can be read through the same Bit 7 and Bit 6 pins. When the Bit 7 and Bit 6 pins are connected, a voltage difference is detected by the readline. The data contained in the EEPROM cell can thus be read by monitoring the voltage difference on the readline.

The AT24C64AN-10SI-1.8-T EEPROM cell is also capable of being programmed and erased in-system. This means that the data contained in the EEPROM cell can be updated remotely using a serial interface. The serial interface allows for greater reliability and data retention.

Overall, the AT24C64AN-10SI-1.8-T EEPROM cell provides superior reliability, data retention, and interoperability. The device supports a wide range of applications across industrial and automotive industries. The AT24C64AN-10SI-1.8-T EEPROM cell is ideal for portable products, such as smartcards and radio-frequency identification devices (RFID).

The AT24C64AN-10SI-1.8-T memory device provides customers with a cost-effective solution for storing and accessing data in electronic devices. This device offers a reliable and versatile solution for a variety of applications.