
Allicdata Part #: | AT25080AN-10SU-2.7-T-ND |
Manufacturer Part#: |
AT25080AN-10SU-2.7-T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 8K SPI 20MHZ 8SOIC |
More Detail: | EEPROM Memory IC 8Kb (1K x 8) SPI 20MHz 8-SOIC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (1K x 8) |
Clock Frequency: | 20MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | AT25080 |
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AT25080AN-10SU-2.7-T is a type of non-volatile, electrically-erasable, programmable memory solid-state IC from Microchip Technology Inc. This IC is used for a wide range of applications, from high-end industrial to low-end consumer. Depending on the specific application, the IC can be used for data storage, boot-up storage, high-speed processing, and more. The primary benefit of the part is its low power consumption and smaller form factor than other types of memory.
Application Field
The AT25080AN-10SU-2.7-T belongs to the category of serial EEPROMs – so-called non-volatile memory (NVM). It is a well-understood, reliable, and proven technology with decades of field-proven experience. It is a one-time programmable (OTP) solution and is used for a wide range of applications such as embedded systems, automotive, industrial, medical, consumer, and aerospace.
The AT25080AN-10SU-2.7-T simplifies integration in high-end systems by providing design flexibility, higher density and higher write speed than other types of memory. Its small package size makes it a suitable choice for devices with tight space constraints.
Working Principle
The device’s working principle is based on the Fowler-Nordheim Tunneling Effect. This effect enables electrons to tunnel or "float" through thin layers of inorganic material and get stored within the cells for a long time. The stored electrons can then be read out as voltage signal which is used for processing the stored data.
This technology is non-destructive and can be used in many different applications. It is ideal for applications that require frequent writing, especially where write speed and endurance are important, as it can offer significant savings in terms of time, space, and money.
The AT25080AN-10SU-2.7-T is also ideal for reliable low-power applications that use battery supply, where energy management is a primary requirement. Hence, it offers the perfect solution for long-term data retention and protection against power loss.
Conclusion
In summary, the AT25080AN-10SU-2.7-T is an ideal memory solution for products requiring high levels of reliability and low power consumption. This type of device has been designed and tested to meet the needs of various applications, and is a good choice for designers looking to save time and money while still providing a reliable product.
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AT25160AY1-10YI-2.7 | Microchip Te... | 0.0 $ | 1000 | IC EEPROM 16K SPI 20MHZ 8... |
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AT25SF041-MAHD-T | Adesto Techn... | -- | 1000 | IC FLASH 4M SPI 104MHZ 8U... |
AT25DF011-XMHNHR-T | Adesto Techn... | 0.57 $ | 1000 | IC FLASH 1M SPI 104MHZ 8T... |
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AT25080N-10SI | Microchip Te... | 0.0 $ | 1000 | IC EEPROM 8K SPI 3MHZ 8SO... |
AT25320T2-10TC-2.7 | Microchip Te... | 0.0 $ | 1000 | IC EEPROM 32K SPI 3MHZ 20... |
AT25SF321-SSHD-T | Adesto Techn... | -- | 20000 | IC FLASH 32M SPI 104MHZ 8... |
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