AT25DF512C-XMHN-T Integrated Circuits (ICs)

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The AT25DF512C-XMHN-T is a 512-Kbit serial flash memory implemented in a 4-pin SPI bus compatible package. This device offers the highest serial throughput performance, and features a versatile protocol interface suitable for high-performance, persistant memory drive applications. It is designed for power-efficient, non-volatile, long-term code storage, code runtime, and configuration memory protection.

The AT25DF512C-XMHN-T supports five serial SPI modes: Mode 0 (0,0), Mode 1 (1,0), Mode 2 (0,1), Mode 3 (1,1), and Dual SPI. Mode 0 is the software compatible SPI mode, where the data is latched on the rising and trailing edges of SCK. Mode 1 is the hardware handshake mode, where the data is latched on the rising edges of SCK, and the CS signal is used for data flow control. Mode 2 is the programming mode, where the data is latched on the trailing edges of SCK. Mode 3 is the read-only mode, with the data latched on both the rising and trailing edges of SCK. The Dual SPI mode provides high-speed performance by sending data on both serial data pins, while simultaneously receiving data on both pins. This mode provides up to double the serial throughput compared to the standard read or write speed, reducing the average bus turnaround latency.

The AT25DF512C-XMHN-T also has several advanced features, such as greater than 100,000 erase/program cycles, typical read speeds of up to 104Mbit/s, and endurance characteristics that are approximately 50 times higher than some competing devices. It also offers secure data storage with hardware encryption and write-protection, and built-in ECC (Error-Correction-Code) for improved reliability. Additionally, it includes powerful command sets that provide flexible data structure and error-checking support.

The AT25DF512C-XMHN-T works by applying external selected voltages to the write gate, i.e. to the BE–NWE and BE–NE pins. This is used to initiate a write operation, and the AL/BL pins can be used for Address/Data I/O during a write. During a read operation, data can be retrieved from the chip by clocking in the same external voltages on the WE–NWE and WE–NE pins. This will then output the requested data on the AL–BL pins.

This device is a reliable and cost-effective memory solution for many applications, including embedded applications like automotive, industrial, and medical device designs, as well as a wide variety of consumer products. It is also suitable for desktop and notebook computers, PDAs and other digital devices, and can help reduce power consumption and system cost.

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