AT25160B-PU Allicdata Electronics
Allicdata Part #:

AT25160B-PU-ND

Manufacturer Part#:

AT25160B-PU

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 16K SPI 20MHZ 8DIP
More Detail: EEPROM Memory IC 16Kb (2K x 8) SPI 20MHz 8-PDIP
DataSheet: AT25160B-PU datasheetAT25160B-PU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Base Part Number: AT25160
Description

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Memory

The AT25160B-PU is a popular memory chip used in many applications. It is a non-volatile static random-access memory device, meaning it can retain data even when powered off. The device has a capacity of 1024 Kbits, meaning it can store up to 64K data bytes. The AT25160B-PU is often used in electronic control devices and can be used for applications such as automotive or medical machineries.

Application field

The AT25160B-PU is used for a wide range of applications, such as automotive controllers, robotics, medical device control, industrial controllers, and so on. It is designed to provide a reliable and stable memory solution for control devices and to offer greater reliability with reduced power consumption than other similar devices.

The device features a high programming speed, extremely low power consumption, and is capable of holding specific data even when powered down. The device is also capable of storing large amounts of data and is highly reliable, which makes it ideal for use in battery powered applications.

Working Principle

The AT25160B-PU has a simple working principle that is based on the standard static random-access memory (SRAM) design. It consists of an internal latch and transistor logic structure, which controls the data flow between the address and data buses. In order to access a location in the memory, the address is first sent to the device, followed by a “latch enable” signal. This signal allows the device to prepare for accessing the address specified. Once the address is ready, the data is read or written.

The device can operate in either byte or word mode, depending on the application. In byte mode, the data is transferred as 8-bit bytes, while in word mode, the data is transferred as 16-bit words. The device is capable of reading and writing up to 64K bytes of memory.

The specific data is subject to PDF, and the above content is for reference

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