Allicdata Part #: | AT25640T2-10TC2.7-ND |
Manufacturer Part#: |
AT25640T2-10TC-2.7 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 64K SPI 3MHZ 20TSSOP |
More Detail: | EEPROM Memory IC 64Kb (8K x 8) SPI 3MHz 20-TSSOP |
DataSheet: | AT25640T2-10TC-2.7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 64Kb (8K x 8) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 20-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 20-TSSOP |
Base Part Number: | AT25640 |
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The AT25640T2-10TC-2.7 Flash Memory is an EEPROM, or Electronically Erasable Programmable Read-Only Memory. This type of memory is used in many applications and can be found in products such as cell phones and automotive systems. It is a nonvolatile memory that can store data for extended periods of time even after power to the device is shut off.
The AT25640T2-10TC-2.7 memory is organized into a 32 kB array in a 48-pin plastic SOIC package. The memory can be indexed in byte and page increments; each page is 256 bytes. The memory also has a security feature that can be used to prevent unintended programming, erasure, and reading of the memory contents. This security allows for a device to protect sensitive data.
The AT25640T2-10TC-2.7 Flash Memory can be used in a wide range of applications that require nonvolatile data storage, such as automotive and industrial control systems. The memory is also ideal for applications that require protection of data such as content delivery systems. The nonvolatile nature of the memory means that it can be used to store data that must remain intact even after power has been removed from the device.
The working principle of the AT25640T2-10TC-2.7 Flash Memory is based on the N-channel, floating gate transistor. The memory cell is composed of two transistors, one of which is connected to a control gate and can be programmed with a control voltage. Once the memory cell is programmed, the data is stored in the floating gate and protected even after power is removed from the device.
The memory cell is programmed by applying a positive voltage to the control gate of the transistor. This increases the current flow through the transistor, which charges the floating gate and stores the desired data. When the programming process is completed, the memory cell can hold the data until it is erased. The memory cell can be erased by applying a negative voltage to the control gate, which removes the charge from the floating gate and allows for the data to be modified.
The AT25640T2-10TC-2.7 Flash Memory is a versatile and reliable memory device that can be used in a wide range of applications. It is an ideal choice for applications that require non-volatile data storage, protection of sensitive data, and other features. The memory can be programmed and erased quickly and efficiently, making it a great choice for many types of devices.
The specific data is subject to PDF, and the above content is for reference
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