AT25DF041A-MH-T

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The AT25DF041A-MH-T memory device is designed to store program and data. This low-voltage, 4 megabit (512 Kibyte) SERIAL FLASH memory device is organized as two million erase/program cycles with byte-level erase capability. It has an 8-bit-wide data bus, and operates at speeds up to 20MHz. It has an extended temperature range (-40° to 125° Celsius).

The device supports an SPI interface that allows communication with a microcontroller\'s SPI port. It has the following main features: sector protection, sector erase lock bits, sector status registers, and device status registers. It is suitable for applications including industrial, automotive, medical, telecommunications and consumer electronics.

The command set for the AT25DF041A-MH-T memory consists of the following functions: chip erase, sector erase, block erase, program/erase suspend, read status register, write status register, program/erase cycle count, read non-volatile configuration register and write non-volatile configuration register. The device has an internal erase/program operation counter and a sector erase lock bit. The Write Status Register command can erase or program the internal erase/program operation counter and set or clear the sector erase lock bit.

The AT25DF041A-MH-T is a non-volatile serial flash memory device offering high performance and low power consumption. The device can be accessed from one of two SPI ports. It is organized as 512Kbytes with a page size of 256 bytes and consists of 16 sectors, each containing 32Kbytes.

The device has commands for basic operations including sector erase, block erase, program, and read operations. The sector erase feature enables sectors to be erased independently which reduces the erase time and extend the life of the device. A sector erase protection feature protects the sector from being accidentally erased if the sector is not intended to be erased. The block erase feature enables 64 consecutive sectors to be erased at once. The program feature allows single or multiple byte writes inside a page.

The device has a hardware based write-protect feature to prevent incorrectly written data by an external system, thus reducing the overall write time and eliminating intermediate state storage. The write-protect feature can only be disabled or enabled by a hardware signal.

The flash memory device contains several on-chip registers to store Non-Volatile (NV) and Configuration (CFG) information. These can be read and written by the appropriate SPI commands. The device supports five application NV configurations, allowing user settings and stored information to be retained after power-loss.

In addition, the integrated security features protect against unauthorized access and control the use of the device. The on-chip configuration registers include a write protection bit and a sector OR block erase security bit. These provide protection against reads of sensitive areas of the memory. The device also offers sector erase lock bits, which can be locked or unlocked by the user.

The AT25DF041A-MH-T supports many other features, such as read and program suspend and program cycle count, providing an optimized specification for applications that require fast access to serial flash. The data can be programmed in single or multiple-byte write mode. Endurance cycle count of up to 2 million program and erase cycles and data retention of up to 10 years provide reliable long-term data storage.

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