AT25DF512C-SSHN-B Allicdata Electronics
Allicdata Part #:

1265-1179-5-ND

Manufacturer Part#:

AT25DF512C-SSHN-B

Price: $ 0.32
Product Category:

Integrated Circuits (ICs)

Manufacturer: Adesto Technologies
Short Description: IC FLASH 512K SPI 104MHZ 8SOIC
More Detail: FLASH Memory IC 512Kb (64K x 8) SPI 104MHz 8-SOIC
DataSheet: AT25DF512C-SSHN-B datasheetAT25DF512C-SSHN-B Datasheet/PDF
Quantity: 1866
1 +: $ 0.28350
Stock 1866Can Ship Immediately
$ 0.32
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 3.5ms
Memory Interface: SPI
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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AT25DF512C-SSHN-B is a 512-kilobit (64K x 8) Serial Flash memory that is divided into two different components: a memory array and a system interface. It is classified as a Memory device, and is a popular choice of product for many applications in the industry. The maximum operating temperature of the AT25DF512C-SSHN-B is 125°C.

The AT25DF512C-SSHN-B has the speed of up to 104MHz. It supports the SPI serial bus interface and is available in different packages, namely a PLCC (plastic leaded chip carrier), TSSOP (thin shrink small-outline package), and an RN48C/D/E package, which is an OTP (one-time programmable) device.

The AT25DF512C-SSHN-B features some enhanced functionality that is advantageous to its users. They are its enhanced write protection, software data protection, hardware write protection and Quad I/O (QI) capability. Enhanced write protection allows write protection at the sector or block level by either the status register or the configuration register in the system interface. Software write protection allows the user to protect the data in the memory array using either the simple software or hardware write protection.

Hardware write protection allows the memory array to be protected from write operations that are performed through the system interface. The Quad I/O (QI) capability allows for faster read and write operations. It is also used to reduce the power consumption of the device.

The AT25DF512C-SSHN-B supports the following memory commands: read, write, enter the deep standby mode, exit the deep standby mode, erase, program, and deep power-down mode. Read operations are used to read the content of the memory array. Write operations are used to write data to the memory array. Erase operations are used to erase the contents of the memory array. Program operations are used to program data into the memory array. The deep standby mode is used to put the device into a low power consumption state.

The deep power-down mode is used to put the device into an ultra-low power consumption state. The device will enter this mode when it is not being used and can be re-activated by exiting the deep power-down mode. The AT25DF512C-SSHN-B also comes with an auto-increment feature, which allows the user to read or write multiple bytes of data in a single operation.

The AT25DF512C-SSHN-B is a popular choice for applications such as industrial automation, medical instrumentation, telecommunication, consumer and automotive electronics. It is also used in telecom, data processing, and automotive system monitoring applications. It can be used for boot-strapping, application code storage and data logging.

The AT25DF512C-SSHN-B is a memory device that has many applications and is a popular choice of product for many industries and applications. It features enhanced write protection, software write protection and hardware write protection, as well as Quad I/O (QI) capability. It also supports the following memory commands: read, write, enter the deep standby mode, exit the deep standby mode, erase, program, and deep power-down mode.

The specific data is subject to PDF, and the above content is for reference

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