AT25FS040N-SH27-B Allicdata Electronics
Allicdata Part #:

AT25FS040N-SH27-B-ND

Manufacturer Part#:

AT25FS040N-SH27-B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M SPI 50MHZ 8SOIC
More Detail: FLASH Memory IC 4Mb (512K x 8) SPI 50MHz 8-SOIC
DataSheet: AT25FS040N-SH27-B datasheetAT25FS040N-SH27-B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 50µs
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: AT25FS040
Description

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Memory plays an important role in the modern electronic system. AT25FS040N-SH27-B is a type of memory that can be used to store significant amounts of data. This article will discuss the application fields of AT25FS040N-SH27-B as well as its working principle.

AT25FS040N-SH27-B is a type of non-volatile Flash memory that is typically used for program and data storage. It is manufactured by Atmel Corporation, a leading supplier of Flash memory. AT25FS040N-SH27-B is a low-cost and low-power solution for embedded applications such as automotive, consumer, and industrial electronics. This memory is capable of storing up to 4 megabytes of data. It features an 8-bit multiplexed address/data bus, an active-low chip select and active-high write protect signal, and an active-low write enable signal.

The AT25FS040N-SH27-B is available in two different packages, an 8-pin VFBGA (Very Fine Pitch Ball Grid Array) and a 27-pin SOIC (Small Outline Integrated Circuit). The chip size is 1 x 2.9 mm for the VFBGA and 8.3 x 4.4 mm for the SOIC. It offers a wide range of operating voltage, from 2.7V to 3.6V, and operating temperature range from -40° to +85° C.

The working principle of AT25FS040N-SH27-B is based on the Flash memory. This type of memory is a type of semi-conducting material known as Silicon oxide that has been \'doped\' with other materials. The Flash memory consists of series of transistors that form memory cells. In the memory cells, electrons can be stored and they can be retained even without the presence of power. To write data in the memory cells, the electrons are forced by applying a magnitude of electrical current.

The AT25FS040N-SH27-B features a wide variety of features that make it an ideal solution for many applications. It has a fast write time of 10 microseconds and fast random read time of 8 microseconds. In addition, the device offers a low-power standby mode that allows for less power consumed. It also offers an enhanced block lock register feature, which enables the locking of any 64-byte portion of the memory array. The device also offers an unlimited number of write/erase cycles, making it an ideal choice for applications that require frequent writing and erasing of data.

In short, the AT25FS040N-SH27-B is an ideal choice for a variety of applications such as automotive, consumer, and industrial electronics. Its low cost and low power design make it suitable for many applications. It has a fast write and read speed and features an enhanced block lock register feature. Moreover, it offers unlimited number of write/erase cycles, making it a reliable and durable memory solution.

The specific data is subject to PDF, and the above content is for reference

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