
Allicdata Part #: | AT25M02-SSHM-B-ND |
Manufacturer Part#: |
AT25M02-SSHM-B |
Price: | $ 1.58 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 2M SPI 5MHZ 8SOIC |
More Detail: | EEPROM Memory IC 2Mb (256K x 8) SPI 5MHz 8-SOIC |
DataSheet: | ![]() |
Quantity: | 1588 |
1 +: | $ 1.58000 |
10 +: | $ 1.53260 |
100 +: | $ 1.50100 |
1000 +: | $ 1.46940 |
10000 +: | $ 1.42200 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Mb (256K x 8) |
Clock Frequency: | 5MHz |
Write Cycle Time - Word, Page: | 10ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory: AT25M02-SSHM-B application field and working principle
AT25M02-SSHM-B is a memory IC designed and manufactured by Advanced Micro Devices (AMD), specifically for industrial applications. This chip can make data stored and retrieved much more rapidly and cost effectively than traditional memory. It is also used in many embedded systems into automobiles, consumer electronics, medical and industrial systems.
The AT25M02-SSHM-B is a precise, low-power, high-performance memory device with a large memory capacity. It is an 8K-bit, 2-Mbit Serial Flash Memory device, organized as 128K×8, with a high-speed SPI interface.
The AT25M02-SSHM-B has a small form factor, a 1.8V single-supply voltage and space efficient packaging. It has key features such as multi-byte page erase, block erase and chip erase, set-up control for sector protection, 64-Byte page write and a 70MHz SPI clock.
Working principle of AT25M02-SSHM-B is based on “hot electron” injection, which is the injection of accelerated electrons into a floating gate with an applied electric field. The accumulated electrons move to the conduction band with help of this electric field and become trapped by the floating gate.
When writing data, the electrons come out of the floating gate and move to the conduction band where they eventually dissipate through the substrate by tunneling. This process modulates the electric field on the floating gate and the charge stored on it. These stored charges remain in the memory even when the power is switched off.
When the power is applied again, the charge remains and the data is read out of the AT25M02-SSHM-B. The read process can be done in two methods: serial or parallel. In the serial method, the data is read out one bit at a time. In the parallel method, the entire memory contents can be read out in one shot, or word-mode or page-mode reads.
AT25M02-SSHM-B is a reliable and advanced memory technology for industrial applications. It combines advantages of an efficient, low-power solution with a large memory capacity. It can be used in different embedded systems to store important data which can be retrieved instantly when needed.
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