AT25M02-SSHM-B Allicdata Electronics
Allicdata Part #:

AT25M02-SSHM-B-ND

Manufacturer Part#:

AT25M02-SSHM-B

Price: $ 1.58
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 2M SPI 5MHZ 8SOIC
More Detail: EEPROM Memory IC 2Mb (256K x 8) SPI 5MHz 8-SOIC
DataSheet: AT25M02-SSHM-B datasheetAT25M02-SSHM-B Datasheet/PDF
Quantity: 1588
1 +: $ 1.58000
10 +: $ 1.53260
100 +: $ 1.50100
1000 +: $ 1.46940
10000 +: $ 1.42200
Stock 1588Can Ship Immediately
$ 1.58
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Mb (256K x 8)
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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Memory: AT25M02-SSHM-B application field and working principle

AT25M02-SSHM-B is a memory IC designed and manufactured by Advanced Micro Devices (AMD), specifically for industrial applications. This chip can make data stored and retrieved much more rapidly and cost effectively than traditional memory. It is also used in many embedded systems into automobiles, consumer electronics, medical and industrial systems.

The AT25M02-SSHM-B is a precise, low-power, high-performance memory device with a large memory capacity. It is an 8K-bit, 2-Mbit Serial Flash Memory device, organized as 128K×8, with a high-speed SPI interface.

The AT25M02-SSHM-B has a small form factor, a 1.8V single-supply voltage and space efficient packaging. It has key features such as multi-byte page erase, block erase and chip erase, set-up control for sector protection, 64-Byte page write and a 70MHz SPI clock.

Working principle of AT25M02-SSHM-B is based on “hot electron” injection, which is the injection of accelerated electrons into a floating gate with an applied electric field. The accumulated electrons move to the conduction band with help of this electric field and become trapped by the floating gate.

When writing data, the electrons come out of the floating gate and move to the conduction band where they eventually dissipate through the substrate by tunneling. This process modulates the electric field on the floating gate and the charge stored on it. These stored charges remain in the memory even when the power is switched off.

When the power is applied again, the charge remains and the data is read out of the AT25M02-SSHM-B. The read process can be done in two methods: serial or parallel. In the serial method, the data is read out one bit at a time. In the parallel method, the entire memory contents can be read out in one shot, or word-mode or page-mode reads.

AT25M02-SSHM-B is a reliable and advanced memory technology for industrial applications. It combines advantages of an efficient, low-power solution with a large memory capacity. It can be used in different embedded systems to store important data which can be retrieved instantly when needed.

The specific data is subject to PDF, and the above content is for reference

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