AT25PE80-SHN-T Integrated Circuits (ICs) |
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| Allicdata Part #: | 1265-1327-2-ND |
| Manufacturer Part#: |
AT25PE80-SHN-T |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Adesto Technologies |
| Short Description: | 8-SOIC-W IND TEMP 1.7V |
| More Detail: | FLASH Memory IC 8M (4096 pages x 256 bytes) SPI 85... |
| DataSheet: | AT25PE80-SHN-T Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH |
| Memory Size: | 8M (4096 pages x 256 bytes) |
| Clock Frequency: | 85MHz |
| Write Cycle Time - Word, Page: | 8µs, 4ms |
| Memory Interface: | SPI |
| Voltage - Supply: | 1.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
| Supplier Device Package: | 8-SOIC |
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AT25PE80-SHN-T Application Field and Working Principle
AT25PE80-SHN-T is a type of Serial Flash memory, manufactured by Atmel Corporation. It is a nonvolatile memory device with 16Mbits of memory capacity. This memory can be used in a wide range of applications, including data storage, system configuration, and bootup code.
The AT25PE80-SHN-T features an SPI protocol with up to 25MHz clock frequency operations, fast read and write cycle times, write latency of 4µs and a page write latency of 4µs. It is also equipped with data protection features, such as write protection, time-out mechanism and power failure protection, to insure long-term data integrity. This provides reliable and secure data storage for various applications.
The AT25PE80-SHN-T is well-suited for applications that require high data integrity and security, such as banking cards, consumer remote controls, POS terminals, industrial IoT, and automotive infotainment systems. The device provides the necessary security and data storage for these applications.
The working principle of the AT25PE80-SHN-T is based on its Flash cells. The cells are made up of a charge trapping structure, which contains two metal-oxide layers. They form an electrical capacitor that stores the information bit that is programmed into the cell. When a voltage is applied to the capacitor, the metal-oxide layers convert the charge stored in the capacitor into an electrical current, which is then read by the device as a 1 or a 0. This data can be read and written at speeds of up to 25MHz.
The AT25PE80-SHN-T also features special features such as write protection, which prevents inadvertently writing to the device. This prevents accidental erasure, which can be critical for many applications. The AT25PE80-SHN-T also features a time-out mechanism, which is used to ensure that data continues to be written and read to the memory device regularly. With these features, the AT25PE80-SHN-T ensures reliable and secure data storage for various applications.
In conclusion, the AT25PE80-SHN-T is an excellent choice for applications that require reliable data storage. It features high-speed read and write times, as well as special features such as write protection and time-out mechanism. These features ensure the long-term data integrity and security of the device and make it well-suited for use in many applications.
The specific data is subject to PDF, and the above content is for reference
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AT25PE80-SHN-T Datasheet/PDF