AT25XE041B-MHNHR-T Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AT25XE041B-MHNHR-T is a type of Memory with a diversified application field and working principle. It is a ferroelectric memory (FeRAM) and comprises of a nonvolatile array of orthogonally crossed ferroelectric capacitors, with each cell being connected in series or in parallel. Because of its excellent characteristics, AT25XE041B-MHNHR-T is widely used in many fields.

Application Fields

The AT25XE041B-MHNHR-T can be used to store user data in embedded systems such as those used in automobiles, industrial automation and medical equipment. In addition, this memory device has a much higher longevity than other types of memories, making it ideal for applications in which long-term data storage is critical, such as in industrial and medical applications.

As a type of non-volatile memory device, AT25XE041B-MHNHR-T is also highly suitable for applications with frequent power failures, such as elevator control systems, RTUs and telecommunication systems. It can provide robust data storage, even in the event of a power failure.

Working Principle

AT25XE041B-MHNHR-T is based on a ferroelectric capacitor, which is composed of a thin film of lead zirconate titanate (PZT). It works on the principle of electrical polarization. When subjected to an electric field, the electric dipoles in the material will orient in the direction of the applied field, resulting in a remanent polarization. The material will remain polarized in this state until a reverse electric field is applied.

To read the data stored in the AT25XE041B-MHNHR-T memory device, an electric field is applied in the direction opposite to the one used to set the polarization. The current required to reverse the polarization is then measured to determine whether the data stored is a logic “1” or “0”. The electrical charge stored in the memory cell can be retained for a very long time without the need for power.

Advantages

AT25XE041B-MHNHR-T is a reliable and long-term memory solution due to its low power consumption and long life. This type of memory is also highly cost-efficient and can be used for a wide variety of data storage applications. Moreover, the device is ideal for embedded systems because of its low voltage, low cost and high density.

AT25XE041B-MHNHR-T can also provide a wide range of data protection methods, in addition to its low power consumption. These data protection mechanisms can prevent data loss due to power failure, accidental deletion, or tampering with the data. This is beneficial for applications where reliability and data security are of utmost importance.

Conclusion

AT25XE041B-MHNHR-T is a versatile memory device with a wide range of applications, including embedded systems, industrial automation and medical equipment. The device works on the principle of electrical polarization and has excellent characteristics such as low power consumption and high-density capacity. It offers high reliability and long-term durability for critical data storage applications due to its unique data protection features. As a result, AT25XE041B-MHNHR-T is a reliable and cost-efficient memory solution for many different applications.

The specific data is subject to PDF, and the above content is for reference