AT26DF161A-SU

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AT26DF161A-SU is a type of non-volatile, electrically erasable programmable read-only memory (EEPROM). It is organized as 1,048,576 bits with 8 bits per byte and is organized into 131,072 bytes, with the first 128 bytes or a 1Kb protected against write or program operations by the hardware write-protect feature described in the Device Operation section. This memory has a comprehensive set of features which can be optimized for various applications.

Application field

The AT26DF161A-SU is suitable for a wide range of applications, including automotive, industrial, consumer and medical. It can be used to store settings, calibration parameters, system configuration data, etc. The device’s reliability and endurance make it ideal for mission-critical applications.

The device also features an extended endurance window, providing up to 200 K endurance cycles per byte, an Erase to ESD protection of up to 1K cycles, and a data retention period of up to 20 years at 25 °C. This makes it suitable for storing the data required for mission-critical applications in the most robust manner possible.

The AT26DF161A-SU also provides a secure, extremely reliable solution for applications such as radio frequency identification (RFID), authentication, encryption, and authentication key storage. These applications require the most secure and reliable data storage available, and the AT26DF161A-SU provides a cost-effective solution.

Working principle

The AT26DF161A-SU uses a single EEPROM memory array to store and manage data. The device is organized into 131,072 memory cells, each of which can hold 8 bits of data in byte mode or 16 bits of data in word mode. The device can be read, written, erased, and programmed through a synchronous serial interface.

Reading data from the device is a relatively simple process. Data is requested by sending an address to the device, and the desired data is returned via the serial interface. Writing data to the device is also relatively simple. The data is sent via the serial interface, and the desired address is then written.

Erasing data from the device is done by applying a signal to the appropriate pin, which causes the device to be erased. Once the device is erased, the bits can be reprogrammed. Finally, data can be programmed into the device by sending data through the serial interface and then toggling a pin, which causes the device to write the data to the specified address.

Conclusion

The AT26DF161A-SU is a reliable, high-performance non-volatile MEMORY, suitable for a wide range of applications. It is organized as 1,048,576 bits with 8 bits per byte and is organized into 131,072 bytes, and features extended endurance, erase to ESD protection, and a data retention period of up to 20 years. The device features a synchronous serial interface and can be read, written, erased, and programmed through it. It is suitable for a wide range of applications, including automotive, industrial, consumer, and medical.

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