AT27C010-90PI Allicdata Electronics
Allicdata Part #:

AT27C010-90PI-ND

Manufacturer Part#:

AT27C010-90PI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 1M PARALLEL 32DIP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 90n...
DataSheet: AT27C010-90PI datasheetAT27C010-90PI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP
Base Part Number: AT27C010
Description

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AT27C010-90PI is a popular integrated CMOS circuit (IC) used mainly as a Read Only Memory (ROM) device. In the chip, microprocessors have the ability to permanently store data or instructions while they are powered off, making the device ideal for application in a wide range of embedded systems.AT27C010-90PI is often identified by its acronym, EEPROM, which stands for Electrically Erasable Programmable Read-Only Memory. Its high storage capacity of up to 90kb, combined with its ability to retain data for a long period, has made it popular for use in a wide range of applications in the electronics industry.The AT27C010-90PI memory device is used in a number of different embedded and peripheral applications, typically where there is a need for a microprocessor to store a set of instructions and data that remain persistent after the main power source has been turned off. Such applications include digital clock modules, LCD/LED displays, motor control systems and antenna/graphics controllers for television. Additionally, the chip is also often used for general-purpose non-volatile memory needs in embedded systems.The AT27C010-90PI works on a principle that uses small metal-oxide-semiconductor field effect transistors (MOSFETs)in order to store the binary information (i.e.0s and 1s) in a non-volatile manner. A control gate, initiates the process of reading or writing a bit based on the simultaneous presence of positive and negative voltage at the source and drain of the MOSFET cell. This triggers an avalanche breakdown of the isolation between the sources and drain, and consequently create a set of channels which allow the current to flow through, allowing the data to be written to or read from the desired memory address. For reading, the source, drain and control gate are continuously monitored in order to determine the status of the bit at the specific address. The sense amplifier (or the read amplifier) located at the drain, does this by using an algorithm that sends nearly equal voltages to the source and drain and begins to compare their states as an output voltage increases. When a difference is detected between them, the amplifier sends two opposite control signals to a latch circuit which in turn sets the data value of the address to either a 0 or a 1. Similarly, while writing data, the supply voltage is adjusted depending on whether the bit value is a 1 or a 0, and the data is tailored according to the output of the read amplifier which detects the new state of the bit and sends a corresponding control signal to a latch circuit. The AT27C010-90PI memory device can be powered down in order to significantly reduce power consumption when not in use, and also helps to extend its service life of the chip. It is a cost-effective memory solution as it is widely available at a low cost, and is able to deliver good performance when used in a variety of applications. Overall, the AT27C010-90PI is an important and versatile integrated circuit used in various embedded and peripheral applications. It offers an effective storage option for both volatile and non-volatile data, and is able to retain data for a long period even when the device is powered down.

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