AT27C256R-15TC Allicdata Electronics
Allicdata Part #:

AT27C256R-15TC-ND

Manufacturer Part#:

AT27C256R-15TC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 256K PARALLEL 28TSOP
More Detail: EPROM - OTP Memory IC 256Kb (32K x 8) Parallel 15...
DataSheet: AT27C256R-15TC datasheetAT27C256R-15TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: --
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP
Base Part Number: AT27C256
Description

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The AT27C256R-15TC is a generic, high-density, 0.350 micron CMOS programmable read only memory (PROM). It is a member of the AT27C Series family of products, which includes high-density ultraviolet erasable and electrically erasable programmable read only memory (EEPROM) devices. This device provides a 256K-bit memory array organized as 32K by 8/16K by 16, and fabricated on a single chip, making it ideal for applications which require high-density memory requirements, such as portable and embedded systems.

The AT27C256R-15TC is a versatile memory device that can be used for a variety of applications, including data acquisition and analysis, analog-to-digital and digital-to-analog conversion, system monitoring, distributed control and embedded control. It is also suitable for applications that require high-density memory storage, such as storage of large sets of pre-programmed code sections (programmable code sections) used in digital control systems.

The AT27C256R-15TC is manufactured using CMOS technology. CMOS technology utilizes low power consumption and provides superior circuit speed, making it ideal for high-density, low-power applications. The device is fabricated using a 0.350 micron CMOS technology that provides high-speed access times and low power consumption.

The AT27C256R-15TC utilizes a self-timed cycle to read and write data. This self-timed cycle is initiated by placing the command onto the device\'s address bus and then reading the appropriate data from the device. During a read or write cycle the device will select the appropriate address and read or write the data from or to that address. The device utilizes an internal programmable logic array (PLA) for selecting the address and data for the read and write operation. The device also utilizes three levels of error correction circuitry for data integrity.

The AT27C256R-15TC also features a special feature called a burst mode. Burst mode allows the device to access multiple addresses in one cycle. For example, if a 8-bit data word needs to be read, the device will first read the first 4 bits of the data word and then read the other 4 bits in the next cycle. This feature allows the device to access multiple addresses in one cycle, providing optimal performance.

The AT27C256R-15TC is a low-cost, high-density memory device, suitable for a variety of applications, such as data acquisition and analysis, analog-to-digital and digital-to-analog conversion, system monitoring, distributed control and embedded control. It is suitable for applications that require high-density memory storage and access, as well as applications that require low power consumption and fast access times. The device utilizes a self-timed cycle for accessing data and also features a burst mode for optimal performance.

The specific data is subject to PDF, and the above content is for reference

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