AT28HC256E-70TU Allicdata Electronics
Allicdata Part #:

AT28HC256E-70TU-ND

Manufacturer Part#:

AT28HC256E-70TU

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 256K PARALLEL 28TSOP
More Detail: EEPROM Memory IC 256Kb (32K x 8) Parallel 70ns 28...
DataSheet: AT28HC256E-70TU datasheetAT28HC256E-70TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP
Base Part Number: AT28HC256
Description

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Memory

A memory device is a type of electronic device that is used to store information or data. Examples of memory devices include dynamic random access memory (DRAM), or RAM, and solid-state storage devices, such as flash memory, which are used in many consumer electronics devices, including digital cameras and tablets. One such memory device is the AT28HC256E-70TU, which is a low voltage CMOS SRAM chip that is capable of operating at both low and high temperatures.

The AT28HC256E-70TU is a type of serial EEPROM memory, meaning it is a non-volatile memory which can retain data even when the system power is turned off. It is a dual-ported memory device that combines the advantages of DRAM and ROM technologies. It is designed to be used in both embedded and personal computer applications, with parametric ratings of 1.8V to 2.7V and an operating temperature range of -40°C to +85°C.

This memory device offers a variety of features, such as page write operation, which allows the user to write a page of data efficiently using the device\'s page write mode; burst read reference, which allows the device to repeat a chip location continuously until the command set is finished; low standby power, which helps to reduce the device\'s power consumption; error codes output, which can detect certain types of implicit errors; and hardware write protection, which can help prevent data from being inadvertently written to a chip.

The AT28HC256E-70TU operates on the basis of a static random access memory (SRAM) cell, which consists of a flip-flop circuit that stores a single bit of data. The cell is made up of 4 to 6 transistors, and it is capable of storing one bit of data which can be accessed quickly. SRAM memory is designed to be faster and more reliable than the more commonly used dynamic RAM (DRAM), which stores data in capacitors that need to be periodically refreshed. However, SRAM is also more power hungry and expensive than DRAM.

The AT28HC256E-70TU is also capable of using self-timed write cycles, meaning that the user does not need to manually provide timing information for each write command. This helps to enable the device to read and write data at high speed without requiring a dedicated processor. The device also features low active and standby power consumption, which helps to reduce power consumption and extend battery life.

The AT28HC256E-70TU is capable of being used in a variety of applications, including in automotive systems, consumer electronics, industrial controllers, network and communications equipment, and microcontrollers. Its low operating temperature and robust memory architecture make it an ideal choice for memory applications in extreme environments, such as in automotive systems, which require reliable and robust memory devices.

The specific data is subject to PDF, and the above content is for reference

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