AT45DB021E-MHN2B-T Integrated Circuits (ICs)

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Memory is one of the most important parts of a computer system, from low-power systems to supercomputers. The AT45DB021E-MHN2B-T is a serial interface Flash memory device, used for embedded applications. It has a large capacity and utilizes advanced technology to deliver speed, low power consumption, and reliability.

The AT45DB021E-MHN2B-T is designed with a 512-Kbyte non-volatile Flash array organized into 512 pages. It has a 128-byte SRAM buffer that can hold a single page of data and can be accessed at high speed. The device has Self-Timed Programming Cycle, which reduces the overhead of reading and writing. It also supports both internal and external data erase and program.

The AT45DB021E-MHN2B-T has an SPI-Compatible Serial Peripheral Interface (SPI) for communication. Serial data bits are shifted out ( shifted in ) of (to) the chip simultaneously with an internally generated serial clock to minimize pin count and reduce board complexity. The Serial Peripheral Interface can also be used to cascade multiple devices together.

The AT45DB021E-MHN2B-T device supports multiple operations to read, write, and erase data. The Read operation sets the power/program status to active and commands the internal column address counter to access the data from the target page location. The device can also program data from the appropriate location in the internal SRAM buffer to the target page location. Both the page read and page write operations can be initiated via external commands or the internal self-timed write process.

The AT45DB021E-MHN2B-T includes a security register that supports unique 16-byte chip identification through a one-time programmable 64-byte Serial Address Field. It also supports a one-time programmable 128-byte Serial access protection, which provides a maximum of 128 distinct lock mechanisms.

The AT45DB021E-MHN2B-T is designed to provide an extended temperature range of -40°C to +85°C. It is an ideal choice for applications requiring low power, high speed, and reliability in harsh environmental conditions.

The AT45DB021E-MHN2B-T has several advantages in memory applications. It is designed with advanced CMOS technology, which consumes less power and is more reliable than conventional memories. Its low voltage operation and wide temperature range make it ideal for embedded applications. The device is also VeriSafe-EW certified for safety compliance.

In summary, the AT45DB021E-MHN2B-T is a high-performance memory device ideal for embedded systems. Its large capacity, low power consumption and reliability make it an ideal choice for applications where speed and reliability are of utmost importance.

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