AT45DB161B-CC

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AT45DB161B-CC is a Type 2 Standard Multi-Level Cell (MLC) NAND Flash memory device often used in many digital systems, especially in the fields of embedded, industrial, the internet of things, and automotive. As a multi-level cell device, it offers a unique series of advantages, such as increased storage, higher throughput, and decreased power consumption. In addition, the AT45DB161B-CC offers multiple voltage tolerance to support different use cases.

The AT45DB161B-CC is designed to sustain multiple 1-bit per cell flash operations, making it extremely reliable in applications requiring long-term operation. With an extended endurance of up to 10,000 write/erase cycles and a data retention period of 20 years, the AT45DB161B-CC offers a maximum of 10 years of reliable operation in certain environments.

The AT45DB161B-CC sports a 16-bit data bus with a maximum data transfer rate of up to 66 megabits per second, making it a great choice for applications requiring fast data access and storage. It offers a maximum storage capacity of 16 megabytes and a 6-bit address pointer for addressing of large block sizes.

The device also features an on-death erase protection feature that provides enhanced protection against any unexpected power failure. This feature can erase data from the flash device when power is lost, helping preserve the integrity of the data. Additionally, the device also provides ECC algorithms for data protection and correction.

On the other hand, the AT45DB161B-CC has a built-in signal detection circuit that can detect a signal when the device is power-off or power-down. This circuit can detect any signal high or low and the signal can be used as a marker to indicate when the device is power-off and helping ensure data integrity.

One of the most unique features of the AT45DB161B-CC is its ability to select between multiple bus speeds. This allows the user to select the speed that best suits the application, providing flexibility in how the memory is used. The device also supports multiple read modes, allowing the user to read data from the flash with different speeds and data formats.

In terms of the working principle, the device supports two operating modes: the write cycle and the read cycle. During the write cycle, data is written into the memory by executing a write command over the data bus. The write command works by maintaining the read/write command bus and the data bus for the duration of the write cycle. During the write cycle, configuration bits stored in Flash State Register (FSR) are used to configure the write parameters, such as speed and whether the data is written to a single or multiple memory locations.

Once the write cycle is complete, the read cycle begins. During the read cycle, the device’s data bus is connected to the data-in line while the I/O lines are routed to the controller. The read cycle is the normal operating mode and is used by the application to read data from the memory. The read cycle can also be used for recovery and other operations.

The AT45DB161B-CC memory is a great choice for applications that require high density and reliability. It offers high throughput, low power consumption, extended endurance, and multiple read modes, making it ideal for embedded, industrial, the internet of things, and automotive applications.

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