Allicdata Part #: | 1265-1004-ND |
Manufacturer Part#: |
AT45DB041D-MU |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Adesto Technologies |
Short Description: | IC FLASH 4M SPI 66MHZ 8VDFN |
More Detail: | FLASH Memory IC 4Mb (264 Bytes x 2048 pages) SPI 6... |
DataSheet: | AT45DB041D-MU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 4Mb (264 Bytes x 2048 pages) |
Clock Frequency: | 66MHz |
Write Cycle Time - Word, Page: | 4ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-VDFN (6x5) |
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The AT45DB041D-MU is a high-performance NAND Flash memory device designed for digital still cameras and other mobile applications. It is a non-volatile storage device that uses Flash memory to store data. This device provides the highest density available in an IC-based NAND Flash memory, and is suitable for a wide range of applications.
The AT45DB041D-MU is a single-bit-wide Flash memory device with 4,096 pages per block, each page containing 264 bytes of data. It is manufactured in a 2.7V to 3.6V range, and it also features a power output pad for power management to extend the device\'s battery life. The device also supports industry-standard protocols, including Inter AES-128, SMBus, and Compact Flash.
The AT45DB041D-MU has several features that make it an ideal choice for mobile applications, such as its small size, high data storage density, fast data access times, and low power consumption. It also has a fast programming speed and a write-protect pin to prevent any accidental erasure of data. Additionally, this device is configured to automatically recognize the type of media inserted and adjust its performance accordingly, ensuring that it is well-suited to a wide range of digital still cameras and other mobile applications.
The working principle of the AT45DB041D-MU is based on NAND Flash memory, which is a type of Flash memory that stores data by trapping electrons in a floating gate structure. This process is known as Fowler-Nordheim tunneling, which occurs when electrons are forced through a thin oxide layer that separates two conducting layers. When electrons traverse the oxide layer, they accumulate on the opposite side, forming a charge. This charge is used to hold the data in the memory.
The AT45DB041D-MU uses this NAND Flash memory structure to store and retrieve data. When data is written to the device, it is stored in the form of pages, with each page containing a maximum of 264 bytes of data. Reading and writing operations on the memory device are carried out using standard protocol commands. These commands are sent to the device through an interface, such as the SMBus or Compact Flash. Data is read from and written to the Flash memory using the industry-standard Flash Memory Commands (FMC).
The AT45DB041D-MU is an essential component for a wide range of digital still cameras and other mobile applications. It offers the highest density available in an IC-based NAND Flash memory, as well as low power consumption, fast programming speed, and write-protect pin, making it the ideal choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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