AT45DB041E-SHN-T Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	4Mb (264 Bytes x 2048 pages)
Clock Frequency:	85MHz
Write Cycle Time - Word, Page:	8µs, 3ms
Memory Interface:	SPI
Voltage - Supply:	1.65 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.209", 5.30mm Width)
Supplier Device Package:	8-SOIC

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AT45DB041E-SHN-T Memory

AT45DB041E-SHN-T memory is an advanced form of non-volatile memory which is widely used in a variety of applications. It is a high-performance dataflash manufactured by Atmel with a capacity of 4Megabits. This memory is manufactured with a serial interface and features a high data write speed of 5Mbit/s @500KHz, which makes it suitable for applications requiring fast write access such as data processing.

Application Field of AT45DB041E-SHN-T Memory

AT45DB041E-SHN-T memory offers superior performance in many applications and is widely used in embedded systems, industrial equipment and medical electronics. This memory is used in devices like digital cameras, video recorders, printers, automotive systems and identification cards. It is also used in devices requiring large memory capacity such as medical imaging systems and medical record systems. This memory is also used in applications where system maintenance is critical such as military systems, aerospace systems and safety/security systems.

Working Principle of AT45DB041E-SHN-T Memory

The working principle of AT45DB041E-SHN-T memory is based on the use of flash memory cells. Each cell consists of a floating gate, which can store a bit of information. These bits of information are stored in the memory cells as a voltage. Each memory cell is divided into two segments, which is what gives this type of memory its non-volatility. One segment stores the data in the cell, while the other maintains the control for the memory cell.When data is written to the memory controller, it is written to the floating gate in the memory cells. The data is written in binary form, with each "1" or "0" representing a voltage level. When the controller reads the data back from the cells, it reads the voltage levels and interprets them as "1" or "0" accordingly. The memory controller then sends the data to the microcontroller or other device that requested the data.AT45DB041E-SHN-T memory is also designed with power-saving features. When the system is idle or not in use, the memory controller will automatically shut off the memory, reducing power consumption. This feature is especially useful for systems that require long-term operation or those used in very low-power settings.The AT45DB041E-SHN-T memory is also designed to store data for a long time without losing its contents. This data retention is due to the use of non-volatile flash memory cells, which are less susceptible to environmental conditions such as temperature, humidity and magnetic fields.

Conclusion

AT45DB041E-SHN-T memory is a popular form of non-volatile memory used in a variety of applications. Its superior performance and power-saving features make it a good choice for embedded systems and industrial equipment. Its data retention and long-term operation capabilities make it an ideal choice for medical imaging systems and medical record systems.

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