AT45DB041E-SHN2B-T Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AT45DB041E-SHN2B-T is a kind of memory device belonging to the category of non-volatile memories, which have the special ability to retain information, even when the power supply is cut off or turned off. This unique property ensures that it is used in a large number of applications, which require the data to be persistent even when the power is disrupted. With its 4M bits of storage capacity, this product can be applied in a wide range of applications that require high-capacity data storage and fast transfer speed.

The AT45DB041E-SHN2B-T is an EEPROM chip with an integrated page buffer, which allows for very fast data transfer rates. This enables it to be used for applications in which large amounts of data must be stored and quickly retrieved, such as data logging and embedded systems. The device also has an on-board error detection and correction system to ensure correct data integrity.

The AT45DB041E-SHN2B-T has a number of features that make it a suitable solution for many applications. It has an operating temperature range of - 40 ˚C to 85 ˚C and a data retention of over 100 years, allowing it to be used in a wide range of industrial applications, even in harsh environments. The storage capacity of 4M bits is also ideal for applications which require the storage of large amount of data.

In terms of the working principle, the AT45DB041E-SHN2B-T operates according to the typical EEPROM protocol. The device works by storing data in an array of memory cells which can be read out, written to, and erased. A page buffer is used to temporarily store data before it is written to the memory cells. Writing data occurs in two steps, first the data is written to the page buffer and then, when the page buffer is ready, it is written to the memory cells. The device is also capable of reading data from the memory cells, erasing the memory cells, and writing to the flash device.

The AT45DB041E-SHN2B-T is a very useful memory device for a wide range of applications which require persistent storage, fast transfers, and high capacity storage. Its wide operating temperature range, good reliability and error detection/correction system make it an ideal choice for almost any application. Furthermore, its use of the typical EEPROM protocol makes it easy to integrate into any system, allowing it to be used in a variety of situations.

The specific data is subject to PDF, and the above content is for reference