Allicdata Part #: | AT45DB041E-UUN2B-T-ND |
Manufacturer Part#: |
AT45DB041E-UUN2B-T |
Price: | $ 0.69 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Adesto Technologies |
Short Description: | IC FLASH 4M SPI 85MHZ 8WLCSP |
More Detail: | FLASH Memory IC 4Mb (256 Bytes x 2048 pages) SPI 8... |
DataSheet: | AT45DB041E-UUN2B-T Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.63221 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 4Mb (256 Bytes x 2048 pages) |
Clock Frequency: | 85MHz |
Write Cycle Time - Word, Page: | 8µs, 3ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 8-UFBGA, WLCSP |
Supplier Device Package: | 8-WLCSP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AT45DB041E-UUN2B-T is a non-volatile memory that is used in various applications both commercially and industrially. It exhibits characteristics of being small in size and possessing high endurance and reliability. The AT45DB041E-UUN2B-T provides a non-volatile parallel or serial interface that can support both read and write functions. It is also capable of read and write operations at higher speeds than traditional types of memories.
This type of memory is known for its applications in the industrial, automotive, consumer, aerospace and military sectors. It is also useful for embedded and virtual applications. This type of memory has the ability to retain data even when power is switched off. Therefore, it is suitable for applications which require data protection for longer periods of time. It is also used in storage devices such as USB flash drives, compact discs, digital cameras, music players and hard drives.
The AT45DB041E-UUN2B-T is based upon a statically erasable and programmable memory architecture, which utilizes a charge trapping technology. This technology is known as a cell level ferroelectric RAM (FeRAM), which is based on a ferroelectric layer that allows one single bit to be addressable. This type of memory is also known for its low power with endurance levels of more than 10^14 read/write cycles.
The architecture of the AT45DB041E-UUN2B-T is based on two components, the controller and the memory. The memory consists of 4Megabit memory die, which is divided into 4096 blocks. Each block has 256 pages, and each page features 528 bytes. The controller is responsible for interfacing with the host and for interfacing with the memory. The controller also takes care of operations such as write protection and error detection. Furthermore, it enables the memory die to access data and also provides necessary support functions such as auto-pageing and buffer management.
In terms of its working principle, the AT45DB041E-UUN2B-T memory is programmed using an inverting command. This means that data is written to the cells in an inverted form. This type of writing allows the memory to be programmed at low temperatures and very quickly. Furthermore, it can be erased using an erase command which is used to remove the data stored in the cells.
Additionally, the AT45DB041E-UUN2B-T uses a higher voltage in order to protect against excessive read/write operations. This is known as the write protect voltage (WPV). The WPV helps to increase the endurance of the memory. The WPV is adjustable and can be set from 8 to 21 volts, depending on the application.
Overall, the AT45DB041E-UUN2B-T is a highly reliable, durable and cost-effective memory type suitable for various storage and industrial applications. It offers a wide range of features including high endurance, low power consumption and a high level of data protection. Furthermore, it can be programmed and erased quickly and easily, providing a good solution for high reliability, long term data storage applications.
The specific data is subject to PDF, and the above content is for reference
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