AT45DB081E-MHN-Y

1 Overview

The AT45DB081E-MHN-Y is used to store and protect data against sudden power loss and can be used in a variety of embedded applications. It utilizes a non-volatile Flash E²PROM technology to achieve non-volatile data storage. This Flash E²PROM consists of four 8-bit channel memory banks which are made up of two 512-bits array cell blocks.

The AT45DB081E-MHN-Y also has an on-chip power-on detection that ensures that data is maintained even during a power failure. It also contains a simple 8 instructions, 8-bits data bus which simplifies the programming process and provides for secure data transfers.

The AT45DB081E-MHN-Y also provides for gated power when the device is in stand-by mode. This means that the device can remain in stand-by mode without consuming power, until it is activated with the appropriate command.

2 Features

• Implements a 128-bit Virtual Pages (VP) memory block in which individual blocks can be addressed
• Contains a nonvolatile Flash E²PROM and on-chip power-on detection and switching circuitry
• Provides Single Level Program/Erase control
• Has a Simple 8 instructions 8-bits data bus to address the memory device
• Autonomous Power ON/OFF control
• Gated Power ON/OFF when device is in stand-by mode
• Multiple I/O capabilities
• Internal Clock generator

3 Application Field

The AT45DB081E-MHN-Y is used in a variety of embedded applications such as Smart Card and RFID applications, flash drives and other environmental monitoring equipment. The device is designed to protect and store data against sudden power loss and is very popular in such applications.

In addition, the AT45DB081E-MHN-Y is also used in non-volatile memory storage because of its ability to withstand a wide range of temperatures and extreme environmental conditions. The device has been tested to operate in temperatures ranging from -40°C to +85°C.

It is also used in power failure events because of its on-chip power-on detection and switching circuitry. This ensures that data is maintained and can be retrieved even after power has been lost.

4 Working Principle

The AT45DB081E-MHN-Y utilizes a non-volatile Flash E²PROM technology which allows for non-volatile data storage. This Flash E²PROM consists of four 8-bit channel memory banks which are made up of two 512-bits array cell blocks. It also contains a simple 8-instructions 8-bits data bus which simplifies the programming process and provides for secure data transfers.

The AT45DB081E-MHN-Y also has an on-chip power-on detection that ensures that data is maintained even during a power failure. It also has a gated power-on state, meaning that the device can remain in a stand-by mode without consuming power until it is activated with the appropriate command.

The device also utilizes a 128-bit Virtual Pages (VP) memory block in which individual blocks can be addressed. This helps to ensure that data is retrieved quickly and easily. Furthermore, the device also contains a single chip microcontroller which can be used to control data manipulation and access.

In summary the AT45DB081E-MHN-Y is a specialized Flash E²PROM device which provides for non-volatile data storage. It has an on-chip power-on detection, a single level Program/Erase control, and a gated power-on when the device is in stand-by mode. This makes the device ideal for embedded applications such as Smart Cards, RFID and Flash Drives.