AT45DB081E-SSHN-T Integrated Circuits (ICs)

AT45DB081E-SSHN-T is a type of memory technology used in commercial memory cards and embedded applications. It is a non-volatile memory application for data storage, which means the data will not be lost even if the power is removed. It has an 8-Mbit memory capacity, which is enough to store several large files or images with typical resolution of 2048x2048 pixels. AT45DB081E-SSHN-T is a type of flash memory, a type of electronically erasable programmable read-only memory (EEPROM) technology. Unlike the traditional EEPROM, this type of memory does not need to be erased and reprogrammed before new data is written. The AT45DB081E-SSHN-T has a page size of 256 bytes, and a sector size of 256KBytes.

AT45DB081E-SSHN-T has a number of applications. It can be used in embedded systems such as Internet of Things (IoT) devices, wearables, tablets, and cameras where temperature, humidity and shock resistant performance are required. It is also commonly used in serial communications products like USB storage and memory cards. AT45DB081E-SSHN-T has a wide operating temperature range to facilitate its use in automotive, industrial and aerospace applications.

The working principle of AT45DB081E-SSHN-T is based on the flash memory. This type of non-volatile memory stores data using a three-transistor memory cell, also called the floating gate transistor (FGT). An FGT is composed of three different regions, the source and the drain, and the floating gate. In order to write data into the memory cell, a write voltage is applied across the source and the drain and a write current is passed through the cell. The write current produces a charge which is trapped by the floating gate and stores the data as a short or a long, depending on the level of charge. When the voltage is removed, the data remains stored in the cell.

To read data from the memory cell, a read voltage is applied between the drain and the source and the current is measured. Depending on the level of charge stored in the cell, a short or a long will be detected. The level of charge determines the value of the data stored in the cell, either a 0 or a 1, which are the two bits that make up a byte. Once the data is read, the cell is reset, ready to receive new data.

AT45DB081E-SSHN-T offers a range of benefits for data storage applications. It provides a high level of stability and reliability with a low power consumption, making it suitable for battery-operated applications. It also has fast write/erase times and a high endurance, which makes it better suited for applications requiring frequent data writing or erasing operations.

In conclusion, AT45DB081E-SSHN-T is a widely used type of memory technology offering a number of advantages for data storage applications including high stability, reliability and endurance. It is commonly used in embedded systems, IoT devices, wearables, tablets, cameras and serial communications products. Its working principle is based on the flash memory technology and it uses a three-transistor memory cell to store and read data.