AT45DB321B-RI Allicdata Electronics
Allicdata Part #:

AT45DB321B-RI-ND

Manufacturer Part#:

AT45DB321B-RI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 32M SPI 20MHZ 28SOIC
More Detail: FLASH Memory IC 32Mb (528 Bytes x 8192 pages) SPI ...
DataSheet: AT45DB321B-RI datasheetAT45DB321B-RI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (528 Bytes x 8192 pages)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 14ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC
Base Part Number: AT45DB321
Description

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As an important storage device, the memory of electronic products has been constantly innovated and improved. Among them, the Static Random Access Memory (SRAM) is known for its good reliability and stability. AT45DB321B-RI is a popular SRAM, designed for high-reliability industrial and extended temperature application fields.

The AT45DB321B-RI belongs to SPI interface Flash Memory, which is a nonvolatile memory device. It has 32M bit capacity and operates in a very wide temperature range from -40°C to 85°C. It has a fast speed of up to 66MHz at 3.3V and can read, write and erase data at relatively low power consumption. Therefore, AT45DB321B-RI is suitable for industrial and extended temperature application fields. In addition, the data can be stored and read without power, the data has no risk of losses due to power outages.

As mentioned earlier, the AT45DB321B-RI is a nonvolatile storage device with a storage capacity of 32M bits. It consists of two 1024-page blocks, each page is 8k-long, and a 64-page cache. When using this memory, the first procedure is to configure the voltage and clock frequency. After that, you can access the device with command sets such as Read, Write and Erase. The working principle is based on the ability of the flash memory to store data in long-term memory cells, and read the data from the memory cells. When writing data, the data is written to the memory cell and then stored. When reading the data, it is loaded from the memory cell to the register. With regard to data erasing, it uses a special “erase-by-block” method, which erases the entire block instead of individual bytes. By using the combination of this command-set, data is written to memory or erased with simple operations.

In terms of reliability and stability, the AT45DB321B-RI is well equipped to handle industrial applications. It has a built-in error check code (ECC) to reduce the possibility of bit errors. In addition, the integrated Wide Bus Architecture (WBA) allows for fast and efficient write and erase operations. Furthermore, the auto power-down feature helps to reduce power consumption. On top of that, the write-reduction feature helps to avoid unnecessary writes, which increases the endurance of the device.

In summary, AT45DB321B-RI is a popular SRAM designed for industrial and extended temperature applications. It has a storage capacity of 32M bits, fast speed of up to 66MHz at 3.3V, and low power consumption. Furthermore, it features a built-in ECC, WBA, and auto power-down feature. In addition, it has a write-reduction feature to avoid unnecessary writes, enhancing the device\'s endurance. All these features make the AT45DB321B-RI a reliable and stable storage device that is suitable for industrial applications.

The specific data is subject to PDF, and the above content is for reference

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