AT45DB321E-MWHF-Y

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AT45DB321E-MWHF-Y is a kind of memory devices. It is a two-wire interface serialflash with a maximum interface frequency of processor. AT45DB321E-MWHF-Y provides denser memory solution for many applications in consumer, automotive and industrial applications.

The AT45DB321E-MWHF-Y features 512-kbit of 2-kbyte uniform sector flash memory with the following features: 8-Lead SOIC, 8-Lead TSSOP surface mount packages, 2.7V to 3.6V power supply voltage range, temperatures ranges from -40°C to +85°C, 200,400 and 600kHz serial clock frequency. AT45DB321E-MWHF-Y has a 64-byte nonvolatile T-buffer that also provides automatic power compensation and voltage maintenance. This allows the host to execute flash reads, erase and program operations with in-rush current that is 5 times less than normal flash parts.

AT45DB321E-MWHF-Y Memory is designed for a range of low-power applications, including automotive, communications, consumer appliance and industrial systems. In terms of applications, AT45DB321E-MWHF-Y can be applied in instant cameras, printers, portable media players, navigation devices, digital cameras, data devices, and crypto coins. Small-pin counts and low power devices, coupled with solid page programming and excellent security features, these devices provide a fast and secure foundation for embedded applications.

The AT45DB321E-MWHF-Y working principle is to allow nonvolatile memory to be read and written electrically. The device is based on a novel cell design and architecture. The physical construction of the device is based on the cells in which the programmed data is stored. The cells consist of two transistors, one capacitor and are sandwiched between two polysilicon layers. The array of cells is produced in standard CMOS processes. The cells form a cross-point structure that contains a dual gate NOR-Flash accessed by multiple bitlines connected to each gate. This architecture of the AT45DB321E-MWHF-Y memory provides the best-in-class performance in terms of data retention, endurance and operation speed.

Reading from the AT45DB321E-MWHF-Y memory is achieved via the serial interface port. In order to retrieve data from the memory, the user\'s specific command is first sent to initiate the interface communication. This command instructs the memory to open the page register which sets up access to the appropriate page within the device. Then, the desired data will be moved from the specific address of the page register to the T-Buffer. After the data is read from the T-Buffer, it is output through the serial interface.

Writing the data to AT45DB321E-MWHF-Y memory is also performed via the serial interface. Once the erase and write command is sent, the host device will first send the data to the specific page register. Eventually, the data is written to the destination page by programming voltage. This enables the data to be written with a single write stroke. Upon completion, the write process is followed by a dummy write cycle to reset the cells and maintain the data integrity.

In conclusion, AT45DB321E-MWHF-Y is a two-wire interface serialflash with 512-kbit of 2-kbyte uniform sector flash memory, providing a denser memory solution for consumer, automotive, industrial applications, and suitable for applications such as digital cameras, navigation devices, data devices and crypto coins due to its small pin counts and low power performance. Furthermore, to read and write data from and to the memory, commands are sent via the serial interface so the data can be moved from the specific address of the page register to the T-Buffer.

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