AT49BV001T-12VI

Memory: AT49BV001T-12VI application field and working principle

AT49BV001T-12VI is a type of memory devices that combines Ultra-High Density NOR Flash memory and all the necessary functions for efficient communication between memory and microprocessors/digital systems. This type of device is designed for embedded applications with data storage requirements.

Applications

The AT49BV001T-12VI memory device provides the perfect solution for systems requiring small form-factor, cost-effective and high-integrity storage of nonvolatile data. This makes it ideal for a variety of embedded applications including automotive, industrial, medical and consumer systems. Applications may include storage, diagnostic, display and control applications.

Features

• Ultra-High Density NOR Flash Memory
• High speed operation with fast write and read times
• Up to 32-bit address and 16-bit data bus
• Low power consumption
• 2-cycle and 3-cycle program and erase operations
• Selectable 1.8V and 3.3V power supply
• Data security provided through a user-defined 8-word signature
• Error correction code (ECC) support
• 32-byte Page Mode
• Power-Fail detection and interrupt generation
• ECC-protected Flash/OTP memory
• Advanced commands for improved erase and read algorithms
• 4KV HBM and 2KV ESD protection

Working Principle

The AT49BV001T-12VI memory device stores data on an Ultra-High Density NOR Flash memory array. The memory array is organized into sectors, pages and words. The data is organized in 8-bit words, where the most significant bits (MSB) constitute the address related bits and the least significant bits (LSB) contain the data. Data is written to the memory array through the use of programming pulses. Programming operations are performed after a sector has been erased. Erase operations are mode specific, but are typically completed in 2 or 3 cycles.

Data is read from the memory array in either a word or a page read mode. In word read mode, a single word is read from the memory array at a time. In page read mode, one or more pages are read continuously. Error correction code (ECC) support is provided for both modes. ECC can either correct single-bit errors or detect double-bit errors. Data stored in the memory array can also be protected from inadvertent programming or erasure operations using the user-defined 8-word signature feature.

Conclusion

In conclusion, the AT49BV001T-12VI memory device is optimized for embedded applications requiring small form factor, cost-effective and high-integrity storage of nonvolatile data. Its Ultra-High Density NOR Flash memory array and additional features, such as ECC support, data security, power-fail detection and interrupt generation, make it an excellent choice for a variety of embedded applications.