AT49F008AT-12TC Allicdata Electronics
Allicdata Part #:

AT49F008AT-12TC-ND

Manufacturer Part#:

AT49F008AT-12TC

Price: $ 8.98
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 8M PARALLEL 40TSOP
More Detail: FLASH Memory IC 8Mb (1M x 8, 512K x 16) Parallel ...
DataSheet: AT49F008AT-12TC datasheetAT49F008AT-12TC Datasheet/PDF
Quantity: 117
1 +: $ 8.16480
10 +: $ 7.56189
25 +: $ 7.45696
100 +: $ 6.45498
Stock 117Can Ship Immediately
$ 8.98
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP
Base Part Number: AT49F008
Description

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Memory - AT49F008AT-12TC application field and working principle

AT49F008AT-12TC is a type of nonvolatile semiconductor memory device, specifically designed for space applications. Originally developed and released by Microchip Technology as a high-speed, non-volatile, electrically erasable programmable read-only memory (EEPROM) with a 512Kb storage capacity, the AT49F008AT-12TC has proven to be a reliable and cost-effective memory solution for enterprise-grade applications.

Applications:

  • Industrial and consumer electronics applications
  • Telecommunications, automotive electronics, and medical equipment applications
  • High-performance space applications, including satellite communications, launch vehicles, and communication systems
  • Consumer and industrial applications, including cell phones and digital cameras

Working Principle:

The AT49F008AT-12TC functions through the action of a small transistor that is built within the memory cell, commonly referred to as the “floating gate.” This floating gate stores the data that is sent to the memory, and can then be retrieved at a later time. In order to write or create data, the controller of the device will create an electrical current between the floating gate and the control gate. This causes the electrons to be “trapped” in the floating gate and be stored in the memory cell.

In order to erase the data stored in the memory, the floating gate must be discharged for the stored electrons to be released. This is done through the use of specialized cells, often referred to as “erase” or “erase blocks,” which are designed to rapidly discharge the electrons from the floating gate. Once the “erase” block is activated, the memory cells are emptied and ready for new data.

Advantages of AT49F008AT-12TC Memory:

  • The AT49F008AT-12TC is a high-speed device, boasting access times of 16 ns, making it one of the fastest EEPROMs available.
  • High reliability and endurance guarantee long lifetime and durability in harsh environments.
  • The AT49F008AT-12TC features EEPROM emulation and also includes on-chip decoder functions.
  • The device comes in a variety of package types, including standard or extended temperature plastic or ceramic packaging, making it compatible with a wide range of application environments.

Conclusion:

The AT49F008AT-12TC from Microchip Technology provides a high speed, reliable, and cost-effective memory solution for various space and industrial applications. With their embedded decoder and on-chip EEPROM emulation, the AT49F008AT-12TC is an ideal choice for applications requiring a low-cost, reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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