AT49F4096A-90RC

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AT49F4096A-90RC Application Field and Working Principle

AT49F4096A-90RC belongs to category of memory. It is an 8 megabit (4 M×16-bit) CMOS Flash memory fabricated with the high performance CMOS EEPROM technology. It is designed with features including uniform breadth, wide voltage operation range, low power consumption, high performance, fast access time and versatile memory organization. AT49F4096A-90RC is suitable for applications such as digital audio with huge memory, handheld terminals, portable communication systems, battery-powered systems, automotive electronics and more.

Working Principle

The memory stores data using Electrically-Erasable Programmable Read-Only Memory (EEPROM) technology, also known as flash memory. Flash memory can be identified as Non-Volatile Memory (NVM), which means that no power is needed in order to maintain data. This makes flash memory ideal for systems that are frequently powered off and on, or lose power from time to time.

The flash memory is composed of cells – each cell stores one bit of data. Cells are arranged in rows and columns, just like any other memory chip. Each cell has two or more transistors. In NAND flash memory, these transistors act as switches. Depending on whether the switch is open or closed, the cell will store a 0 or a 1.

When a write operation is performed, electrons are stored on the gate of one of the transistors. This discrete amount of charge is proportional to the voltages that are applied to the flash memory cell, and is used to represent a 0 or a 1. This stored charge remains in the cell even when power is removed, allowing the data that was stored to remain intact.

During the erase process, an electric field is applied across the cell. This electric field will cause the charge stored on the gate to be removed, effectively erasing the data stored and resetting the memory cell back to 0.

When a read operation is performed, a voltage is applied to the cell, and the state of the switch is determined by measuring the amount of current that is drawn. If the switch is closed, then current is drawn and the bit is read as a 1. If the switch is open, then no current is drawn and the bit is read as a 0.

Conclusion

AT49F4096A-90RC 8 megabit (4 M×16-bit) CMOS Flash memory is an ideal choice for applications requiring large memory storage, wide voltage operation range, low power consumption and fast access time. Its use of EEPROM technology allows data to be maintained even when power is removed, making it ideal for handheld systems that lose power from time to time.

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