AW12P6438BLH9M Allicdata Electronics

AW12P6438BLH9M Memory Cards, Modules

Allicdata Part #:

AW12P6438BLH9M-ND

Manufacturer Part#:

AW12P6438BLH9M

Price: $ 45.28
Product Category:

Memory Cards, Modules

Manufacturer: ATP Electronics, Inc.
Short Description: 4GB 204 PIN UNBUFFERED NON ECC S
More Detail: Memory Module 4GB 204-UDIMM
DataSheet: AW12P6438BLH9M datasheetAW12P6438BLH9M Datasheet/PDF
Quantity: 1000
10 +: $ 41.16420
Stock 1000Can Ship Immediately
$ 45.28
Specifications
Series: --
Part Status: Active
Memory Size: 4GB
Package / Case: 204-UDIMM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory - Modules

The AW12P6438BLH9M is an advanced embedded single-bank memory module that features a dense array of small, low-power DRAM cells. This module is intended for industrial, consumer, automotive, and medical applications requiring high endurance and ultra-low power consumption. This module provides an optimal platform for memory management, security, and real-time control and testing of applications requiring high data throughput.

Application Field

The AW12P6438BLH9M is useful in a variety of applications such as wireless communications, video transmission, computing, storage and networking applications. It is designed to meet the demanding requirements of the industry, especially for applications that require low-power and ultra-high performance. Specifically, the DRAM cell densities of the module make it suitable for high-end computing, high-resolution graphics, 3-D rendering, and embedded neuromorphic hardware. Additionally, its multiple-row memory layout ensures high data throughput for demanding applications

Working Principle

The AW12P6438BLH9M is a single-bank memory module that works on a multiple-row memory layout. The rows are arranged in a parallel fashion, and data can be accessed or stored from any particular row independently. This approach to memory access relieves the main processor from having to perform complex memory management routines, thus providing a balanced load to all the processing cores. Additionally, the memory module uses DRAM cells that have been tightly packed to maximize the data throughput while maintaining low power consumption. The data bandwidth is further improved by an advanced memory controller that is optimized for large throughput operations.

In addition to its multiple-row memory layout and high-end DRAM cell densities, the AW12P6438BLH9M also utilizes advanced error-correction and power-saving techniques to ensure reliability and long device life. A built-in Error Correction Code (ECC) engine is integrated into the module in order to provide additional protection for data integrity. Moreover, its power-saving capabilities can reduce power consumption by up to 20%, compared to other industry standard DRAM modules. Additionally, the module also utilizes Advanced Adaptive Refresh (ATR) technology, which enables it to work optimally across different voltage levels.

Conclusion

The AW12P6438BLH9M is a highly versatile, multi-row memory module that features a densely packed array of DRAM cells. This module is optimized for applications that require low-power and ultra-high performance, and its advanced features ensure reliability and long device life. Additionally, its multiple-row memory layout and advanced error-correction and power-saving techniques make it suitable for a variety of applications including high-end computing, high-resolution graphics, 3-D rendering, embedded neuromorphic hardware, and other applications that require a high data throughput.

The specific data is subject to PDF, and the above content is for reference

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