Allicdata Part #: | AW12P7218BLF8M-ND |
Manufacturer Part#: |
AW12P7218BLF8M |
Price: | $ 51.97 |
Product Category: | Memory Cards, Modules |
Manufacturer: | ATP Electronics, Inc. |
Short Description: | 4GB 204 PIN UNBUFFERED ECC SO-DI |
More Detail: | Memory Module 4GB 240-UDIMM |
DataSheet: | AW12P7218BLF8M Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 47.24370 |
Series: | -- |
Part Status: | Active |
Memory Size: | 4GB |
Package / Case: | 240-UDIMM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
AW12P7218BLF8M, a type of memory modules, is widely used in modern electronics equipment. It is an 8M bit SDRAM (synchronous dynamic random access memory). It is the latest development of dynamic random access memories that features high speed, ultra low power consumption, maximum operation frequency and low standby power. It is designed to be used in a wide variety of cases, such as industrial, automotive, medical, and consumer electronics.
The SDRAM has two operating modes: synchronous mode and asynchronous mode. In synchronous mode, the address and data are both synchronized with the system clock. In asynchronous mode, the asynchronous address and data can be read/written without waiting for synchronous operations. In both modes, the SDRAM always accesses its data in quanta of 32 bits.
In terms of its working principle, AW12P7218BLF8M is based on the classic dynamic random access memory (DRAM) architecture. A dynamic random access memory module can be described as a large array of individual cells, each of which stores a single bit of memory. Each cell can store one bit of data, and the entire memory is accessed through a single bus; it is possible to access one cell at a time or in bursts of multiple cells in an operation. To write data to the SDRAM, one must first initialize all of the cells in the memory in order to set up the parameters necessary for the operation. This is done by precharging the cells to their reference voltage, and then applying the appropriate voltage to the memory cell in order to write the data to the desired cell. Once the data is written, the cells are released, and the data is retrieved when the corresponding memory address is accessed.
There are a number of advantages to using AW12P7218BLF8M memory modules. Since it works on the classic DRAM architecture, it offers a wide range of applications for use in industrial, automotive, medical, consumer electronic, etc. Additionally, it is one of the most power-efficient DRAMs available. It can operate at low power levels, resulting in lower power consumption and consequently lower operating costs. The SDRAM also offers fast access times and a large capacity, enabling it to store large amounts of data quickly and efficiently.
AW12P7218BLF8M memory module is an ideal choice for those looking for a reliable and efficient memory solution for their products. It offers low power consumption, high speed, and a large storage capacity. With its wide range of applications, AW12P7218BLF8M memory module is sure to meet the needs of various markets, making it an ideal choice for any electronic system.
The specific data is subject to PDF, and the above content is for reference
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AW12M7218BLF8M | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12M7218BLF8S | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12M7218BLH9M | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12M7218BLH9S | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12M7218BLK0M | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12M7218BLK0S | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12P7218BLF8M | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12P7218BLF8S | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12P7218BLH9M | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
AW12P7218BLH9S | ATP Electron... | 51.97 $ | 1000 | 4GB 204 PIN UNBUFFERED EC... |
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