Allicdata Part #: | B280Q-13-F-ND |
Manufacturer Part#: |
B280Q-13-F |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 80V 2A SMB |
More Detail: | Diode Schottky 80V 2A Surface Mount SMB |
DataSheet: | B280Q-13-F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10062 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 790mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 7µA @ 80V |
Capacitance @ Vr, F: | 75pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The B280Q-13-F is an ultrafast (sub-nanosecond on time) rectifier diode that offers superior performance and very low reverse current leakage. It is typically used in applications where fast switching and low noise performance is a requirement. It has a maximum continuous forward current of 5A and a breakdown voltage of 400V. The B280Q-13-F is ideal for high-frequency applications including:
- Directional Coupler
- RF (radio frequency) Power Amplifier
- IF (intermediate frequency) Amplifier
- High Speed Switching
- Radio Frequency Applications
- Low Noise Amplifiers
- Amplitude Regulators
- Clamping
The B280Q-13-F has a high transition speed, low reverse current leakages, and extremely low forward voltage. This makes it a good choice for RF, IF, switching, and noise reduction applications. The B280Q-13-F also has excellent protection against thermal runaway, thermal stress, and voltage surge. It is capable of withstanding peak temperatures up to a maximum of +175°C.
The working principle of the B280Q-13-F is based on the PN junction diode. A PN junction diode is an electronic component made up of two layers of semiconductor material. The positive layer, or anode, is typically made up of silicon doped with trivalent impurities such as gallium arsenide or indium gallium arsenide. The negative layer is typically made of a different type of material, such as boron-doped silicon, to create a PN junction. The PN junction produces a barrier potential which, when sufficient forward bias is applied to the diode, causes a majority of electrons from the N (or negative) layer to flow across the junction into the P (or positive) layer.
The B280Q-13-F takes advantage of this phenomenon by utilizing the properties of a PN junction diode to form a rectifying guide element. The PN junction acts as a voltage operated switch, allowing current to flow in one direction when a voltage is applied and blocking current from flowing in the other direction. This type of diode is commonly used in rectifying circuits and is capable of switching from an on state to an off state in a very short time, making it ideal for high speed applications.
The B280Q-13-F offers the advantage of low noise and fast switching, along with excellent thermal stability and excellent protection against voltage surges. It is an ideal solution for a variety of RF, IF, switching, and noise reduction applications.
The specific data is subject to PDF, and the above content is for reference
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