B530C-13-F Discrete Semiconductor Products |
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Allicdata Part #: | B530C-FDITR-ND |
Manufacturer Part#: |
B530C-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 30V 5A SMC |
More Detail: | Diode Schottky 30V 5A Surface Mount SMC |
DataSheet: | B530C-13-F Datasheet/PDF |
Quantity: | 9000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 30V |
Capacitance @ Vr, F: | 300pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | B530 |
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Diodes are electric components that allow current to flow through one direction only. Rectifiers are diodes with the added capability to convert alternating current (AC) into direct current (DC) with a defined polarity. Single or individual rectifiers are semiconductor devices consisting of two layers or terminals of an anode and a cathode. B530C-13-F is a popular single rectifier device with high surge surge withstand capability.
Application fields for the B530C-13-F rectifier include rectification of the voltage produced in motor vehicle alternators, transformers and power supplies for home appliances. It is also used for protection against overvoltage, or in circuits where a voltage over 390 volts has to be switched frequently. The surge capability of the B530C-13-F also makes it suitable for applications with large reverse currents and capacitive switching transients.
The working principle of the B530C-13-F rectifier is based on electrostatic fields. This type of device consists of a semiconductor ceramic layer between two electrodes, an anode and a cathode. When the anode is supplied with a positive potential and the cathode with a negative potential, the semiconductor will create an electrostatic field. The electrostatic field results in a charged region between the anode and cathode.
Current can now flow from the anode to the cathode, but it is blocked from flowing in the opposite direction as the electrostatic field won’t allow carriers of opposite charge to crossover. This is the basic principle of all rectifier.
However, the B530C-13-F is special for its ability to withstand surges of up to 1500 volts. It achieves this through its two terminal construction, where the two terminals are connected with a dielectric layer. This dielectric layer acts to protect the device from the surge, allowing it to quickly retract and recoil in order to absorb the surge without damage.
The B530C-13-F consists of a ceramic layer and external field. The ceramic layer is made of highly conductive and non-magnetic material, and acts to lower current drop. The external field, also known as the avalanche field, suppresses the breakdown of the device due to overvoltage. This ensures the device will not be easily damaged or destroyed due to heavy surges.
The B530C-13-F also has a high power handling capacity, meaning it can dissipate more power without affecting the operation of the rectifier. This allows it to safely handle more current and power without the device becoming damaged.
Overall, the B530C-13-F is an ideal single rectifier device for applications which require protection against high voltage surges and currents. Its two terminal construction, combined with a highly conductive ceramic layer and external field, allows it to absorb surges without damage, while handling a high power capacity easily.
The specific data is subject to PDF, and the above content is for reference
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