B550C-13-F Discrete Semiconductor Products |
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Allicdata Part #: | B550C-FDITR-ND |
Manufacturer Part#: |
B550C-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 50V 5A SMC |
More Detail: | Diode Schottky 50V 5A Surface Mount SMC |
DataSheet: | B550C-13-F Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 700mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 50V |
Capacitance @ Vr, F: | 300pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | B550 |
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The B550C-13-F diode is part of NXP\'s Rectifiers - Single family of products. It is a 2-pin, ultra-small surface mount Schottky barrier rectifier with a maximum reverse voltage of 20V and a maximum forward surge current rating of 500mA.
The B550C-13-F diode is commonly found in applications such as cellular and wireless handsets, laptops and portable consumer electronics, as well as battery-powered systems.
It is a highly efficient rectification component which is capable of operation in high temperatures, thus making it one of the most dependable components available for the most extreme environments. Due to its small footprint, it is also the ideal component for space-saving designs, such as in mobile phones and many other consumer product applications.
The B550C-13-F diode operates as a rectifier converting AC energy into DC as it flows from its anode to its cathode, also known as the positive to the negative terminal. As current passes through the diode, it creates a barrier in the way, only allowing the current to flow in one direction. This prevents any current from flowing back and is how the AC signal is converted into DC.
The B550C-13-F diode is constructed using an ultra-thin gallium arsenide substrate and a heavily doped Schottky barrier layer which is formed between the anode and the cathode. As current flows through the diode, it creates a depletion region which helps to restrict the amount of current that is allowed to pass through it.
In order for the diode to achieve the optimal performance, it is important to consider the following parameters, including the forward and reverse voltage ratings, the forward current rating and the maximum average forward current rating. It is also important to consider the recovery time, leakage current and temperature coefficient.
By taking into account these parameters, the B550C-13-F diode will be able to function efficiently and effectively in a variety of applications. This includes the protection of sensitive systems, such as those found in mobile phones and laptops, from dangerous surges or spikes.
The B550C-13-F diode is a highly reliable, efficient and cost effective component, making it ideal for a variety of applications, particularly in space-saving designs, as well as for applications in extreme environments.
The specific data is subject to PDF, and the above content is for reference
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