Allicdata Part #: | BA479S-TAP-ND |
Manufacturer Part#: |
BA479S-TAP |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE RF PIN 30V 50MA DO35 |
More Detail: | RF Diode PIN - Single 30V 50mA DO-35 |
DataSheet: | BA479S-TAP Datasheet/PDF |
Quantity: | 1000 |
50000 +: | $ 0.08379 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.5pF @ 0V, 100MHz |
Resistance @ If, F: | 50 Ohm @ 1.5mA, 100MHz |
Operating Temperature: | 125°C (TJ) |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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A BA479S-TAP is a high-power semiconductor diode and a high-frequency Radio Frequency (RF) application field, also commonly known as a TWT amplifier. Essentially, this type of diode is used to amplify high-frequency RF waves and is widely used in many applications.
The core of the BA479S-TAP is an epitaxial silicon diode, which is an efficient semiconductor device designed for reliable, high performance operation with minimal power consumption. In terms of design, the diode utilizes a split cathode construction for improved isolation and stability. Additionally, it provides high-power efficiency and repeatable results over usage.
In terms of its RF applications, the specific characteristics of the BA479S-TAP prove to be ideal in many scenarios. Specifically, due to its high power, it can be used to allocate, steer and boost strong RF signals. These signals are needed in order to transfer large amounts of data over broad distances, a critical aspect to many modern technologies, such as telecommunications and Defense applications.
The basic working principle of the BA479S-TAP is simple. Firstly, the signal is inputted into the circuit, then the signal passes through the diode, which performs the conversion from ac to dc. The energy then travels through the diode via two different paths. One passes through the anode and the other passes through the split cathode. The energy from each of these paths is then amplified via the diode designed for this purpose.
The BA479S-TAP is also designed for reliable operation even under extreme conditions. This is due to the efficient heat dissipation design, which ensures the diode stays cool and stable. This stability helps reduce jitter and allows for consistent and accurate results. The long-term reliability of the BA479S-TAP and its wide range of RF application fields have made it a popular choice for many professional designers.
Overall, the BA479S-TAP is an efficient and reliable diode used for high-power RF wave amplification. Its high power efficiency and stability make it a perfect choice for many applications, ranging from telecommunications to defense. Its long term reliability and wide range of RF application fields make it an ideal choice for many professional designers.
The specific data is subject to PDF, and the above content is for reference
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