Allicdata Part #: | BA592E6433HTMA1TR-ND |
Manufacturer Part#: |
BA592E6433HTMA1 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF SW 35V 100MA SOD-323 |
More Detail: | RF Diode Standard - Single 35V 100mA PG-SOD323-2 |
DataSheet: | BA592E6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
30000 +: | $ 0.04339 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 1.1pF @ 3V, 1MHz |
Resistance @ If, F: | 500 mOhm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | PG-SOD323-2 |
Base Part Number: | BA592 |
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BA592E6433HTMA1 is a high frequency diode (RF diode) designed for use in high frequency voltage control applications such as automotive, telecommunications and medical electronics. It is a fast switching diode with a high cut-off frequency and extremely low forward voltage drop. This diode is suitable for use as part of a high frequency RF switching circuit.
The working principle of a diode is relatively simple. It acts as a one-way valve for electricity, allowing current to flow through in one direction only. The diode has two electrodes, an anode and a cathode. When a positive voltage is applied to the anode and a negative voltage is applied to the cathode, the diode allows current to flow from anode to cathode. However, when voltage is applied in the opposite direction (i.e. positive to the cathode and negative to the anode) the diode acts as an insulator, blocking any current flow.
In the case of the BA592E6433HTMA1 diode, the high frequency RF characteristics are achieved due to its extremely low forward voltage drop (typically 0.2 volts when operated at 100MHz). This low voltage drop enables the diode to switch on and off very quickly when operating at high frequencies, thus allowing frequencies up to 1GHz (1000MHz) to be achieved in RF circuits.
In addition to its high frequency performance, the diode also has extremely low reverse leakage current when operated in reverse bias. This low leakage current ensures that the diode does not consume excessive power and contributes to a more efficient RF circuit. The diode also has low capacitance when operated in reverse bias, meaning that it can be used for accurate control of the output frequency of an RF circuit.
The BA592E6433HTMA1 diode has a wide range of applications in the RF field, particularly in automotive, telecommunications and medical electronics. It is ideal for use in RF switching circuits, RF power amplifiers and RF detectors. It is also suitable for use as a voltage controlled oscillator (VCO), allowing the frequency of an RF circuit to be finely tuned and accurately controlled.
In summary, the BA592E6433HTMA1 diode is an ideal choice for use in high frequency voltage control applications such as automotive, telecommunications and medical electronics. It offers a high cut-off frequency and extremely low forward voltage drop, allowing high frequency RF circuits to be achieved up to 1GHz, as well as low reverse leakage current and low capacitance when operated in reverse bias, allowing for accurate control of the output frequency. Therefore, the BA592E6433HTMA1 diode is a perfect choice for any high frequency RF circuit requirement.
The specific data is subject to PDF, and the above content is for reference
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