BA679-M-18

The BA679-M-18 is an RF diode that produces a high-efficiency voltage multiplication effect. This type of diode is a common choice for applications that involve radio frequency circuits and transmission lines. It has a high dynamic range and low impedance input, making it ideal for RF applications. It also has low temperature coefficients, which make it suitable for operating at higher power levels.In RF circuits, the BA679-M-18 is used to convert an input voltage to a higher voltage or current. It works by creating an electrical field between two oppositely charged electrodes when there is an electric field present between the electrodes. The electric field creates an electrostatic force which increases the voltage from the input to the output. This ensures greater efficiency and a greater dynamic range.The BA679-M-18 can be used in many different applications, such as in radio frequency communications and in radar systems. It is also used in TV and radio broadcast transmitters, as well as in ultrasound and ultrasound diagnostic equipment. Additionally, the diode can be used to generate high power microwave pulses for various scientific research applications.The working principle of the BA679-M-18 is based on the principle of electrostatic energy conversion. It operates by converting a low voltage input voltage into a high voltage output. The output voltage is determined by the ratio of the input voltage and the electrostatic force created by the electrode. The diode has a very high voltage multiplication coefficient, which allows it to generate a higher voltage than the input voltage. This makes it ideal for applications that require high-efficiency, high-dynamic range conversions. The BA679-M-18 is designed to be used in low frequency applications and requires very low power. It has a lower switching speed than other RF diodes and is suitable for applications that require low-frequency operation. It is also suitable for applications that involve modulation of signals. The diode is available in a range of packages and form factors, making it suitable for a variety of application requirements.The BA679-M-18 can be used in many different applications and is a popular choice for RF and high-frequency application. It is designed to be used in areas where high voltage, high power, and low power consumption are required. It has excellent dynamic range, which makes it suitable for applications involving radio frequency signals. Moreover, it has low temperature coefficients and is suitable for operating at higher power levels.

BA679-GS18	Vishay Semic...	0.07 $	1000	DIODE PIN 30V SOD80 MINIM...
BA679-GS08	Vishay Semic...	--	1000	DIODE PIN 30V SOD80 MINIM...
BA679S-GS08	Vishay Semic...	0.08 $	1000	DIODE PIN 30V SOD80 MINIM...
BA679-M-18	Vishay Semic...	0.07 $	1000	DIODE PIN 30V SOD80 MINIM...
BA679-M-08	Vishay Semic...	0.07 $	1000	DIODE PIN 30V SOD80 MINIM...
BA679S-GS18	Vishay Semic...	0.08 $	1000	DIODE PIN 30V SOD80 MINIM...
BA679S-M-18	Vishay Semic...	0.08 $	1000	DIODE PIN 30V SOD80 MINIM...
BA679S-M-08	Vishay Semic...	0.08 $	1000	DIODE PIN 30V SOD80 MINIM...
BA6792FP-YE2	ROHM Semicon...	--	1000	IC MOTOR DRIVER PAR 25-HS...