BA682-GS08

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The BA682-GS08 is a semiconductor component belonging to the family of diodes and specifically to the RF (Radio Frequency) category. This component is a high-frequency switching diode optimized for RF applications with operating frequencies up to 500 MHz. It is mainly used in broadband amplifiers, mixers, couplers, and other frequency control circuits.

The BA682-GS08 has a total capacitance of 1pF and a forward voltage drop of 0.9V maximum. It is available in either a leaded or a surface-mount package form, and has an average junction capacitance of 0.7pF. It also has a low leakage current of 0.05mA and an isolation voltage of 10V.

In terms of its working principle, the BA682-GS08 functions as a variable capacitance diode. It utilizes the variable capacitance of a diode connecting to a tuning circuit in order to control the circuit\'s resonant frequency. This is achieved by the constant reverse voltage applied to the diode. The reverse voltage causes a charge to accumulate in the semiconductor material thus changing its capacitance.

The BA682-GS08 is useful in a variety of applications such as frequency synthesizers, modulators, AM, FM and pulse modulated circuits, IF reject filters and broadband amplifiers. It also offers excellent RF performance with low distortion. Its switching time response is fast, with a typical recovery time of 4ns.

The BA682-GS08 is an extremely reliable and cost-effective component making it an attractive choice for RF circuit designs. It offers performance and flexibility to meet specific circuit requirements and is suitable for a wide range of applications. It is also highly durable, with a maximum reverse breakout voltage of 300V.

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