BAR141E6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BAR141E6327HTSA1TR-ND |
Manufacturer Part#: |
BAR141E6327HTSA1 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF DUAL 100V 140MA SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 100V 140mA... |
DataSheet: | BAR141E6327HTSA1 Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.07256 |
6000 +: | $ 0.06862 |
15000 +: | $ 0.06468 |
30000 +: | $ 0.05994 |
75000 +: | $ 0.05797 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 100V |
Current - Max: | 140mA |
Capacitance @ Vr, F: | 0.5pF @ 50V, 1MHz |
Resistance @ If, F: | 12 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BAR14-1 |
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Diodes play an important in many circuits, and act as key components of RF (Radio Frequency) applications. One such diode, the BAR141E6327HTSA1, can be an ideal choice for both general purpose RF applications, as well as specialized RF uses. This diode is available in an SOT-323 package, which can help to reduce space by using surface mount technology.
The BAR141E6327HTSA1 is a silicon epitaxial p-n junction diode providing both fast switching and low capacitance, giving it the advantage of a faster response time than other similar diodes. This makes it ideal for a variety of RF uses such as switching, low EMI (electromagnetic interference) applications, and high-speed modulation. This diode is also suitable for RF detection, rectification, and voltage regulation.
Using the BAR141E6327HTSA1 is relatively simple, as the diode is designed to be connected to an antenna or other external device with a common ground. This diode is then used to detect an RF signal, which is converted into a voltage. The voltage can then be used to regulate and control other components within the circuit.
The BAR141E6327HTSA1 can also be used to modulate an RF signal. For example, in a voltage-controlled oscillator, a DC voltage can be applied to the diode in order to modulate the frequency of the oscillator. This is useful for specialized applications where a precise frequency is needed.
The working principle of the BAR141E6327HTSA1 is relatively simple. When the diode is exposed to an RF signal, it will convert the signal into a voltage. This voltage can then be used to control other components in the circuit, or it can be used to modulate an RF signal. The diode also acts as an amplifier, amplifying the RF signal to a usable level.
Overall, the BAR141E6327HTSA1 is an ideal choice for RF applications. It is designed to be small and lightweight, allowing for a more compact circuit design. Additionally, it provides fast switching and low capacitance, giving it the advantage of a quicker response time. And, with its various applications such as switching, rectification, and modulation, it is a great choice for RF circuits.
The specific data is subject to PDF, and the above content is for reference
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