Allicdata Part #: | BAR9002ELSE6327XTSA1-ND |
Manufacturer Part#: |
BAR9002ELSE6327XTSA1 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE PIN SGL 80V 100MA TSSLP-2 |
More Detail: | RF Diode PIN - Single 80V 100mA 250mW PG-TSSLP-2-3 |
DataSheet: | BAR9002ELSE6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.05644 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 80V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.35pF @ 1V, 1MHz |
Resistance @ If, F: | 800 mOhm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | 0201 (0603 Metric) |
Supplier Device Package: | PG-TSSLP-2-3 |
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The BAR9002ELSE6327XTSA1 is a diode in the RF category. It is designed to be used in RF applications requiring high power. This type of diode is a two-terminal device with a special PN junction that allows it to pass current in one direction and block current from flowing in the opposite direction.
The BAR9002ELSE6327XTSA1 is a general purpose diode for use in high power RF applications. It has a maximum capacitance of 600 pF and an operating frequency range of DC to 1000 MHz. It is rated for an RF power rating of 500 watts and an operating temperature range of -40°C to +200°C.
The BAR9002ELSE6327XTSA1 is designed to be used as an RF power amplifier, voltage regulator, voltage follower, or other general-purpose applications. It is designed to provide maximum output power while minimizing distortion and losses. The diode can also be used to provide high frequency protection against over-voltage conditions.
The working principle of the BAR9002ELSE6327XTSA1 is based on the fact that it has two junctions. The first junction is the forward biased junction, which allows the current to pass through the diode in the forward direction. The second junction is the reverse biased junction, which blocks the current from passing in the reverse direction. The current flows through the diode only when the voltage difference between the two junctions reaches the threshold value. The current passing through the diode is determined by the voltage difference and the resistance of the diode.
In addition to its use in RF applications, the BAR9002ELSE6327XTSA1 can also be used to build voltage regulators, voltage followers, and over-voltage protection circuits. It is also used in radio circuits, where it is used to filter out unwanted signals or to provide RF impedance matching.
The BAR9002ELSE6327XTSA1 is an ideal device for many RF applications due to its high power rating and its ability to handle high voltage. Its wide operating temperature range makes it suitable for use in most high power RF environments. It also has a low capacitance, which helps reduce losses and increases efficiency.
The specific data is subject to PDF, and the above content is for reference
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