BAV199WT-TP Discrete Semiconductor Products |
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Allicdata Part #: | BAV199WT-TPMSTR-ND |
Manufacturer Part#: |
BAV199WT-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | 0.16A,85V,SWITCHING,SOT-323 PKG |
More Detail: | Diode Array 1 Pair Series Connection Standard 85V ... |
DataSheet: | BAV199WT-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03043 |
6000 +: | $ 0.02646 |
15000 +: | $ 0.02249 |
30000 +: | $ 0.02117 |
75000 +: | $ 0.01985 |
150000 +: | $ 0.01764 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 85V |
Current - Average Rectified (Io) (per Diode): | 160mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5nA @ 75V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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BAV199WT-TP, commonly referred to as a Dropper FET, is a three-terminal field-effect transistor (FET) array and is manufactured by NXP Semiconductors. This FET is commonly used to protect sensitive electronics from high-energy voltages. This device consists of three independent FETs, each acting as a rectifier, all housed within a surface-mount package.
This Dropper FET is equipped with two highly reliable metal-oxide-semiconductor FETs (MOSFETs) and one NPN bipolar junction transistor (BJT). Each MOSFET provides a strong output, while the BJT works to provide additional control over the output of the device. This FET is ideal for applications that require low power and current, including the protection of sensitive points in the power supply chain.
The BAV199WT-TP is designed to protect electronics from transient voltages, an essential function in high-power applications such as automotive, industrial, or medical systems. In these applications, transient voltages can range from extremely low (less than 10mV) to extremely high (in excess of 200V). The BAV199WT-TP is able to respond to these voltages in a swift and efficient manner, protecting electronics from potentially damaging voltage levels. Furthermore, this FET is suitable for applications with mixed power sources, allowing the device to quickly detect and react to any changes in input power.
The BAV199WT-TP\'s working principle involves the device\'s three terminals. When a voltage is applied across terminals 1 and 3, the P-channel turns "on" and the N-channel turns "off". This causes a current to flow through the P-channel, and produces a voltage drop across terminations 2 and 3. This voltage drop is then applied to the connected electronic device, thus protecting it from the higher voltage applied across terminals 1 and 3.
As a Dropper FET, the BAV199WT-TP is designed to provide robust protection for a variety of applications. Its low leakage current and low on-state resistance ensure that the device is ideal for high-power, high-voltage applications. Furthermore, its fast reverse-recovery time ensures that the device can quickly respond to changing conditions without damaging the electronics that it is connected to.
The BAV199WT-TP is an excellent choice for applications requiring robust protection against transient voltages and current surges. Its three-terminal design and efficient working principle provide reliable protection for a variety of applications, including those in automotive, industrial, and medical systems. As a result, the BAV199WT-TP is an ideal choice for those looking for a reliable and efficient Dropper FET for protecting sensitive electronics.
The specific data is subject to PDF, and the above content is for reference
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