BAV19WS-HE3-08 Discrete Semiconductor Products |
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Allicdata Part #: | BAV19WS-HE3-08GITR-ND |
Manufacturer Part#: |
BAV19WS-HE3-08 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 250MA SOD323 |
More Detail: | Diode Standard 100V 250mA (DC) Surface Mount SOD-3... |
DataSheet: | BAV19WS-HE3-08 Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.03515 |
6000 +: | $ 0.03056 |
15000 +: | $ 0.02597 |
30000 +: | $ 0.02445 |
75000 +: | $ 0.02292 |
150000 +: | $ 0.02037 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 250mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 100V |
Capacitance @ Vr, F: | 1.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | 150°C (Max) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BAV19WS-HE3-08 is a single rectifier diode component, which has a variety of applications in the power electronic field. It is a three terminal component, which works with various ranges of operating parameters and provides consistent performance over a wide range of applications and temperature operating conditions.
The component has a maximum repetitive peak reverse voltage (VRRM) of 125V and a maximum forward voltage drop (VF) of 0.37V. The maximum avalanche energy (EAS) and peak reverse pulse current of the component is 1J and 20A respectively. The recovery time for this component is also very low. It is able to reach a current of 40 A within 40ns.
The component is typically used for applications such as bridge rectification, freewheeling (protection diodes), and single phase rectification. It is also used in the protection of rectifier assemblies, voltage multiplication circuits, Zener diode protection, and low power switch mode power supplies.
In terms of its working principle, BAV19WS-HE3-08 is a single junction component, which is capable of both forward conduction and reverse blocking operation. In forward conduction, the component allows current to pass from anode to cathode with a low forward voltage drop. This is due to the depletion layer that is formed when the anode is applying positive potential to the cathode. In reverse blocking, the junction prevents current from flowing from the cathode to the anode. This is because the depletion region increases greatly and no current can flow anymore.
The component is also able to recover fast when reverse bias is removed. This is because the stored charge is quickly neutralized and the junction is able to open again. This ability makes the component suitable for high power applications that require high current and low voltage switching.
Apart from the applications mentioned above, BAV19WS-HE3-08 can also be used in various DC–DC converter designs, as well as in solar energy conversion systems. It is also used in automotive and power industries as a rectifying diode. Due to its low leakage current and low forward voltage drop, it is often preferred over alternative components.
In conclusion, BAV19WS-HE3-08 is a single junction rectifying diode component, which is capable of providing consistent performance for multiple applications in the power electronic field. It is suitable for a variety of applications such as bridge rectification, freewheeling, and single phase rectification, as well as DC–DC converter designs and solar energy conversion systems. It also provides excellent recovery times, low forward voltage drop, and low leakage current.
The specific data is subject to PDF, and the above content is for reference
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