Allicdata Part #: | BAW76-TAPGITB-ND |
Manufacturer Part#: |
BAW76-TAP |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 300MA DO35 |
More Detail: | Diode Standard 50V 300mA (DC) Through Hole DO-35 |
DataSheet: | BAW76-TAP Datasheet/PDF |
Quantity: | 1000 |
50000 +: | $ 0.01090 |
100000 +: | $ 0.01022 |
150000 +: | $ 0.00908 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 300mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 50V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
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BAW76-TAP diodes, or tunneling avalanche protection diodes, belong to the family of diodes and rectifiers under the single diode category. They are an efficient component used to provide protection in high voltage applications.
A BAW76-TAP diode is a two-terminal component that consists of two Schottky barrier diodes connected in parallel by a tunneling valley formed between the conduction band and the valence band. It has a low forward voltage drop and a high reverse breakdown voltage. This makes it ideal for use in applications where the input and output voltage levels need to be maintained within a certain range, such as voltage clamping circuits.
The working principle of a BAW76-TAP diode is based on its Schottky barrier feature. The Schottky barrier is created when an n-type semiconductor is put in contact with a metal. This junction creates a rectifying diode that can be used to block or regulate voltage across the diode under certain conditions.
In a BAW76-TAP diode, the tunneling valley is formed between the two Schottky barrier diodes, allowing the electrons to move up and down the conduction band and the valence band. This movement aids in providing the protection to the circuit.
When reverse bias is applied, the BAW76-TAP diode starts to conduct current, thus providing the necessary protection. The tunneling process helps reduce the breakdown voltage and limits the rate at which the current can flow through the diode. This provides the user with protection from electrical overcurrent, which can damage the circuit.
The BAW76-TAP diode is an excellent choice for applications that require fast switching and high voltage breakdown protection. It can be used in power management systems, telecommunications, automotive electronics, and industrial circuits, providing various levels of protection.
The specific data is subject to PDF, and the above content is for reference
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