BAW76-TAP Allicdata Electronics
Allicdata Part #:

BAW76-TAPGITB-ND

Manufacturer Part#:

BAW76-TAP

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 300MA DO35
More Detail: Diode Standard 50V 300mA (DC) Through Hole DO-35
DataSheet: BAW76-TAP datasheetBAW76-TAP Datasheet/PDF
Quantity: 1000
50000 +: $ 0.01090
100000 +: $ 0.01022
150000 +: $ 0.00908
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Description

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BAW76-TAP diodes, or tunneling avalanche protection diodes, belong to the family of diodes and rectifiers under the single diode category. They are an efficient component used to provide protection in high voltage applications.

A BAW76-TAP diode is a two-terminal component that consists of two Schottky barrier diodes connected in parallel by a tunneling valley formed between the conduction band and the valence band. It has a low forward voltage drop and a high reverse breakdown voltage. This makes it ideal for use in applications where the input and output voltage levels need to be maintained within a certain range, such as voltage clamping circuits.

The working principle of a BAW76-TAP diode is based on its Schottky barrier feature. The Schottky barrier is created when an n-type semiconductor is put in contact with a metal. This junction creates a rectifying diode that can be used to block or regulate voltage across the diode under certain conditions.

In a BAW76-TAP diode, the tunneling valley is formed between the two Schottky barrier diodes, allowing the electrons to move up and down the conduction band and the valence band. This movement aids in providing the protection to the circuit.

When reverse bias is applied, the BAW76-TAP diode starts to conduct current, thus providing the necessary protection. The tunneling process helps reduce the breakdown voltage and limits the rate at which the current can flow through the diode. This provides the user with protection from electrical overcurrent, which can damage the circuit.

The BAW76-TAP diode is an excellent choice for applications that require fast switching and high voltage breakdown protection. It can be used in power management systems, telecommunications, automotive electronics, and industrial circuits, providing various levels of protection.

The specific data is subject to PDF, and the above content is for reference

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