BB200,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1951-2-ND |
Manufacturer Part#: |
BB200,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE VAR CAP DUAL 18V SOT-23 |
More Detail: | Varactor 1 Pair Common Cathode 18V Surface Mount T... |
DataSheet: | BB200,215 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Capacitance @ Vr, F: | 14.8pF @ 4.5V, 1MHz |
Capacitance Ratio: | 5 |
Capacitance Ratio Condition: | C1/C5 |
Voltage - Peak Reverse (Max): | 18V |
Diode Type: | 1 Pair Common Cathode |
Q @ Vr, F: | -- |
Operating Temperature: | -55°C ~ 85°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BB200 |
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。Diodes - Variable Capacitance (Varicaps, Varactors) include devices such as the BB200,215, which can be used for a variety of application fields and serve a range of purposes. Such devices are commonly used circuits that employ the idea of varactor diodes and can be used to provide functions such as tuning and voltage control.
The BB200,215 is a high voltage and low voltage adjustable varactors designed for radio frequency applications. It is suitable for applications such as tuning circuits and voltage-controlled oscillators. The device is manufactured from wide bandgap semiconductor material to achieve the necessary breakdown voltages and power dissipation capability. It has a high breakdown voltage of 200 volts and a low breakdown voltage of 215 volts, with a wide range of adjustment.
The working principle of the BB200,215 involves a basic resistor-capacitor network, where the resistance of the varactor diode is varied in order to change the capacitance. A reverse bias voltage is applied between the anode and the cathode, resulting in a depletion region in the diode. As the reverse bias voltage is increased, the depletion region expands and reduces the area between the anode and the cathode. The area reduction reduces the capacitance of the diode. When the reverse bias voltage is decreased, the depletion region decreases in size, increasing the capacitance of the diode.
The BB200,215 provides a wide range of adjustment in capacitance, allowing for effective tuning and voltage control capabilities. It is designed for radio frequency applications, with high current ratings and a low series resistance. Additionally, the device is constructed from a wide-band gap semiconductor material, which ensures stable and reliable operation. Its versatile design and compact size also make it an ideal choice for a variety of applications.
The BB200,215 is an effective and efficient choice for a number of different application fields and serves a variety of purposes. From voltage regulation to tuning and frequency control, the BB200,215 offers the necessary tools for a wide range of radio frequency applications. Its wide-band gap semiconductor material and variable capacitance capabilities make it a reliable and efficient choice for such applications.
The specific data is subject to PDF, and the above content is for reference
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